
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
2
Preliminary
2.0
Product Description
2.1
Product Overview
Intel
 1.8 Volt Wireless Flash Memory with 3 Volt I/O and SRAM combines flash and SRAM into 
one package. The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O divides the flash memory 
into many separate 4-Mbit partitions. By doing this, the device can perform simultaneous read-
while-write or read-while-erase operations. With this new architecture, the 1.8 Volt Intel
Wireless 
Flash Memory with 3 Volt I/O can read from one partition while programming or erasing in another 
partition. This read-while-write or read-while-erase capability greatly increases data throughput 
performance.
Each partition contains eight 32-Kword blocks, called 
“
main blocks.
”
 However, for a top or bottom 
parameter device, the upper or lower 32-Kword block is segmented into eight, separate 4-Kword 
blocks, called 
“
parameter blocks.
”
 Parameter blocks are ideally suited for frequently updated 
variables or boot code storage. Both main and parameter blocks support page and burst mode 
reads.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O also incorporates a new Enhanced 
Factory Programming (EFP) mode. In EFP mode, this device provides the fastest NOR flash 
factory programming time possible at 3.5 μs per data word. This feature can greatly reduce factory 
flash programming time and thereby increase manufacturing efficiency.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O offers both hardware and software forms 
of data protection. Software can individually lock and unlock any block for 
“
on-the-fly
”
 run-time 
data protection. For absolute data protection, all blocks are locked when the V
PP
 voltage falls 
below the V
PP
 lockout threshold.
Upon initial power up or return from reset, the 1.8 Volt Intel
Wireless Flash Memory with 3 Volt 
I/O defaults to page mode. To enable burst mode, write and configure the configuration register. 
While in burst mode, the 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O is synchronized 
with the host CPU. Additionally, a configurable WAIT signal can be used to provide easy flash-to-
CPU synchronization.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O maintains compatibility with Intel
Command User Interface (CUI), Common Flash Interface (CFI), and Intel
Flash Data Integrator 
(FDI) software tools. CUI is used to control the flash device, CFI is used to obtain specific product 
information, and FDI is used for data management.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O and SRAM offers two low-power 
savings features: Automatic Power Savings (APS) and standby mode. The flash device 
automatically enters APS following the completion of any read cycle. Flash and SRAM standby 
modes are enabled when the appropriate chip select signals are de-asserted. 
Finally, the 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O provides program and erase 
suspend/resume operations to allow system software to service higher priority tasks. It offers a 
128-bit protection register that can be used for unique device identification and/or system security 
purposes.
Combined, all these features make the 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O and 
SRAM an ideal solution for any high-performance, low-power, board-constrained memory 
application.