- 您現在的位置：買賣IC網 > PDF目錄368957 > 28F200BV-T Evaluation Kit for the MAX606, MAX607 PDF資料下載
參數資料
| 型號： | 28F200BV-T |
| 英文描述： | Evaluation Kit for the MAX606, MAX607 |
| 中文描述： | 2兆位SmartVoltage啟動塊閃存系列 |
| 文件頁數： | 38/44頁 |
| 文件大?。?/td> | 496K |
| 代理商： | 28F200BV-T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁當前第38頁第39頁第40頁第41頁第42頁第43頁第44頁
28F400BL-T/B, 28F004BL-T/B
AC CHARACTERISTICS FOR WE
Y
-CONTROLLED WRITE OPERATIONS
(1)
V
CC
e
3.15V–3.6V, 5.0V
g
10%
Versions
(4)
28F400BL-150
28F004BL-150
Unit
Symbol
Parameter
Notes
Min
Max
t
AVAV
t
WC
Write Cycle Time
150
ns
t
PHWL
t
PS
RP
Y
High Recovery
to WE
Y
Going Low
1.0
m
s
t
ELWL
t
CS
CE
Y
Setup to WE
Y
Going Low
0
ns
t
PHHWH
t
PHS
RP
Y
V
HH
Setup to WE
Y
Going High
6, 8
200
ns
t
VPWH
t
VPS
V
PP
Setup to WE
Y
Going High
Address Setup to WE
Y
Going High
5, 8
200
ns
t
AVWH
t
AS
3
95
ns
t
DVWH
t
DS
Data Setup to WE
Y
Going High
4
100
ns
t
WLWH
t
WP
WE
Y
Pulse Width
100
ns
t
WHDX
t
DH
Data Hold from WE
Y
High
WE
Y
High
4
0
ns
t
WHAX
t
AH
Address Hold from WE
Y
High
3
10
ns
t
WHEH
t
CH
CE
Y
Hold from WE
Y
High
10
ns
t
WHWL
t
WPH
WE
Y
Pulse Width High
50
ns
t
WHQV1
Duration of Word/Byte
Programming Operation
2, 5, 6
6
m
s
t
WHQV2
Duration of Erase
Operation (Boot)
2, 5, 6
0.3
s
t
WHQV3
Duration of Erase
Operation (Parameter)
2, 5, 6
0.3
s
t
WHQV4
Duration of Erase
Operation (Main)
2, 5, 6
0.6
s
t
QVVL
t
VPH
V
PP
Hold from Valid SRD
RP
Y
V
HH
Hold from Valid SRD
5, 8
0
ns
t
QVPH
t
PHH
6, 8
0
ns
t
PHBR
Boot-Block Relock Delay
7, 8
200
ns
t
IR
Input Rise Time
10
ns
t
IF
Input Fall Time
10
ns
NOTES:
1. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
Characteristics during Read Mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled inter-
nally which includes verify and margining operations.
3. Refer to command definition table for valid A
IN
.
4. Refer to command definition table for valid D
IN
.
5. Program/Erase durations are measured to valid SRD data (successful operation, SR.7
e
1).
6. For Boot Block Program/Erase, PWD
Y
should be held at V
HH
until operation completes successfully.
7. Time t
PHBR
is required for successful relocking of the Boot Block.
8. Sampled but not 100% tested.
38
相關PDF資料 |
PDF描述 |
|---|---|
| 28F200CV-B | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200CV-T | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400B5 | SMART 5 BOOT BLOCK. FLASH MEMORY FAMILY 2. 4. 8 MBIT |
| 28F400BL-B | 4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BL-T | 4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 28F200BV-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F200BV-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-B | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F200BX-T - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
發(fā)布緊急采購，3分鐘左右您將得到回復。