參數(shù)資料
型號(hào): 28F200BV-B
英文描述: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 2兆位SmartVoltage啟動(dòng)塊閃存系列
文件頁數(shù): 31/44頁
文件大小: 496K
代理商: 28F200BV-B
28F400BL-T/B, 28F004BL-T/B
DC CHARACTERISTICS
(Continued)
V
CC
e
3.3V
g
0.3V Read, 3.15V–3.6V Program/Erase
Symbol
Parameter
Notes Min Typ
Max
Unit
Test Conditions
I
CCS
V
CC
Standby Current
1, 3
45
120
m
A V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
IH
m
A V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
CC
g
0.2V
28F400BX:
BYTE
Y
e
V
CC
g
0.2V
or GND
45
120
I
CCD
V
CC
Deep Power-Down Current
1
0.20
1.2
m
A RP
Y
e
GND
g
0.2V
mA V
CC
e
V
CC
Max, CE
Y
e
GND
f
e
5 MHz, I
OUT
e
0 mA
CMOS Inputs
I
CCR
V
CC
Read Current for
28F400BX-L Word-Wide and
Byte-Wide Mode and
28F004BX-L Byte-Wide Mode
1
15
25
5, 6
15
25
mA V
CC
e
V
CC
Max, CE
Y
e
V
IL
f
e
5 MHz, I
OUT
e
0 mA
TTL Inputs
I
CCW
V
CC
Word Write Current
1
30
mA Word Write in Progress
I
CCW
V
CC
Byte Write Current
1
30
mA Byte Write in Progress
I
CCE
V
CC
Block Erase Current
1
20
mA Block Erase in Progress
I
CCES
V
CC
Erase Suspend Current
1, 2
3
6
mA CE
Y
e
V
IH
Block Erase Suspended
I
PPS
V
PP
Standby Current
1
g
15
m
A V
PP
s
V
CC
m
A RP
Y
e
GND
g
0.2V
I
PPD
V
PP
Deep Power-Down Current
1
5.0
I
PPR
V
PP
Read Current
1, 4
200
m
A V
PP
l
V
CC
mA V
PP
e
V
PPH
Word Write in Progress
I
PPW
V
PP
Word Write Current
1, 4
40
I
PPW
V
PP
Byte Write Current
1, 4
30
mA V
PP
e
V
PPH
Byte Write in Progress
I
PPE
V
PP
Block Erase Current
1, 4
30
mA V
PP
e
V
PPH
Block Erase in Progress
I
PPES
V
PP
Erase Suspend Current
1
200
m
A V
PP
e
V
PPH
Block Erase Suspended
I
RP
Y
RP
Y
Boot Block Unlock Current
1, 4
500
m
A RP
Y
e
V
HH
m
A A
9
e
V
ID
I
ID
A
9
Intelligent Identifier Current
1, 4
500
V
ID
A
9
Intelligent Identifier Voltage
11.4 12.0
13.0
V
V
IL
Input Low Voltage
b
0.5
0.6
V
V
IH
Input High Voltage
2.0
V
CC
a
0.5
V
V
OL
Output Low Voltage
0.4
V
V
CC
e
V
CC
Min
I
OL
e
2 mA
31
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