- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F016SA16-MBIT (Intel Corp.) Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A PDF資料下載
參數(shù)資料
| 型號(hào)： | 28F016SA16-MBIT |
| 廠商： | Intel Corp. |
| 英文描述： | Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A |
| 中文描述： | （1兆比特× 16。2兆比特× 8）FlashFile記憶 |
| 文件頁數(shù)： | 5/48頁 |
| 文件大?。?/td> | 304K |
| 代理商： | 28F016SA16-MBIT |
第1頁第2頁第3頁第4頁當(dāng)前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁
E
1.0
SMART 3 ADVANCED BOOT BLOCK
5
PRELIMINARY
INTRODUCTION
This datasheet contains the specifications for the
Advanced Boot Block flash memory family, which is
optimized for low power, portable systems. This
family of products features 1.65 V
–2.5 V or 2.7 V–
3.6 V I/Os and a low V
CC
/V
PP
operating range of
2.7 V–3.6 V
for
read,
operations. In addition this family is capable of fast
programming at 12 V. Throughout this document,
the term “2.7 V” refers to the full voltage range
2.7 V–3.6 V (except where noted otherwise) and
“V
PP
= 12 V” refers to 12 V ±5%. Section 1.0 and
2.0 provide an overview of the flash memory family
including applications, pinouts and pin descriptions.
Section 3.0 describes the memory organization and
operation for these products. Sections 4.0 and 5.0
contain
the
operating
Sections 6.0 and 7.0 provide ordering and other
reference information.
program,
and
erase
specifications.
Finally,
1.1
Smart 3 Advanced Boot Block
Flash Memory Enhancements
The Smart 3 Advanced Boot Block flash memory
features
Enhanced blocking for easy segmentation of
code and data or additional design flexibility
Program Suspend to Read command
V
CCQ
input of 1.65 V–2.5 V on all I/Os. See
Figures 1 through 4 for pinout diagrams and
V
CCQ
location
Maximum program and erase time specification
for improved data storage.
Table 1. Smart 3 Advanced Boot Block Feature Summary
Feature
28F008B3, 28F016B3,
28F032B3
(1)
28F400B3
(2),
28F800B3,
28F160B3, 28F320B3
Reference
V
CC
Read Voltage
2.7 V– 3.6 V
Section 4.2, 4.4
V
CCQ
I/O Voltage
1.65 V–2.5 V or 2.7 V– 3.6 V
Section 4.2, 4.4
V
PP
Program/Erase Voltage
2.7 V– 3.6 V or 11.4 V– 12.6 V
Section 4.2, 4.4
Bus Width
8-bit
16 bit
Table 3
Speed
80 ns, 90 ns, 100 ns, 110 ns
Section 4.5
Memory Arrangement
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit),
4096 Kbit x 8 (32 Mbit)
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit)
2048 Kbit x 16 (32 Mbit)
Section 2.2
Blocking (top or bottom)
Eight 8-Kbyte parameter blocks
and
Seven 64-Kbyte blocks (4-Mbit) or
Fifteen 64-Kbyte blocks (8-Mbit) or
Thirty-one 64-Kbyte main blocks (16-Mbit)
Sixty-three 64-Kbyte main blocks (32-Mbit)
Section 2.2
Appendix D
Locking
WP# locks/unlocks parameter blocks
All other blocks protected using V
PP
Section 3.3
Table 8
Operating Temperature
Extended: –40
°
C to +85
°
C
Section 4.2, 4.4
Program/Erase Cycling
100,000 cycles
Section 4.2, 4.4
Packages
40-lead TSOP
(1)
, 48-Ball
μ
BGA* CSP
(2)
48-Lead TSOP, 48-Ball
μ
BGA CSP
(2)
Figure 3, Figure 4
NOTES:
1.
2.
4-Mbit and 32-Mbit density not available in 40-lead TSOP.
4-Mbit density not available in
μ
BGA* CSP.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F016SV | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 28F016SA | 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器) |
| 28F016XD | 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲(chǔ)器) |
| 28F016XS | 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器) |
| 28F020 | 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
| 28F016SV | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 28F016XD | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY |
| 28F016XS | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。