參數(shù)資料
型號(hào): 28F010
廠商: Intel Corp.
英文描述: 1024K (128K x 8) CMOS FLASH MEMORY
中文描述: 1024K(128K的× 8)的CMOS閃存
文件頁數(shù): 28/30頁
文件大?。?/td> 405K
代理商: 28F010
28F010
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Chip Erase Time
Chip Program Time
Notes
1, 3, 4
1, 2, 4
Min
Typical
1
2
Max
10
12.5
Unit
Sec
Sec
NOTES:
1. ‘‘Typicals’’ are not guaranteed, but based on samples from production lots. Data taken at 25
§
C, 12.0V V
PP
.
2. Minimum byte programming time excluding system overhead is 16
m
sec (10
m
sec program
a
6
m
sec write recovery),
while maximum is 400
m
sec/byte (16
m
sec x 25 loops allowed by algorithm). Max chip programming time is specified lower
than the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case
byte.
3. Excludes 00H programming prior to erasure.
4. Excludes system level overhead.
28
相關(guān)PDF資料
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參數(shù)描述
28F0101024K 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
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