參數(shù)資料
型號: 28F008SC
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: 12V PWM Controller with Hot-Swap
中文描述: 字節(jié)寬SmartVoltage FlashFile Memory系列4。 8。及16兆比特
文件頁數(shù): 32/44頁
文件大?。?/td> 496K
代理商: 28F008SC
28F400BL-T/B, 28F004BL-T/B
DC CHARACTERISTICS
(Continued)
V
CC
e
3.3V
g
0.3V Read, 3.15V–3.6V Program/Erase
Symbol
Parameter
Notes
Min
Typ Max Unit
Test Conditions
V
OH1
Output High Voltage (TTL)
2.4
V
V
CC
e
V
CC
Min
I
OH
e b
2 mA
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
V
CC
e
V
CC
Min
I
OH
e b
100
m
A
V
OH2
Output High Voltage
(CMOS)
0.85 V
CC
V
V
CC
b
0.4
V
PPL
V
PP
during Normal Operations
3
0.0
4.1
V
V
PPH
V
PP
during Erase/Write Operations
11.4
12.0 12.6
V
V
LKO
V
CC
Erase/Write Lock Voltage
RP
Y
Unlock Voltage
2.0
V
V
HH
11.4
12.0 13.0
V
Boot Block Write/Erase
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
3.3V, V
PP
e
12.0V, T
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the device is read while in Erase Suspend Mode, current draw is the sum
of I
CCES
and I
CCR
.
3. Block Erase and Word/Byte Writes are inhibited when V
PP
e
V
PPL
and not guaranteed in the range between V
PPH
and
V
PPL
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to less than 1 mA in static operation.
6. CMOS Inputs are either V
CC
g
0.2V or GND
g
0.2V. TTL Inputs are either V
IL
or V
IH
.
CAPACITANCE
(1)
T
A
e
25
§
C, f
e
1 MHz
Symbol
Parameter
Typ
Max
Unit
Condition
C
IN
Input Capacitance
6
8
pF
V
IN
e
0V
V
OUT
e
0V
C
OUT
Output Capacitance
10
12
pF
NOTE:
1. Sampled, not 100% tested.
32
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