參數(shù)資料
型號(hào)： 28F008SA-L
廠(chǎng)商： Intel Corp.
英文描述： 8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY
中文描述： 8兆（1兆比特× 8）FLASHFILETM記憶
文件頁(yè)數(shù)： 14/49頁(yè)
文件大?。?/td> 408K
代理商： 28F008SA-L
SMART 3 ADVANCED BOOT BLOCK
–BYTE-WIDE
E
14
PRELIMINARY
3.0
PRINCIPLES OF OPERATION
Flash memory combines EEPROM functionality
with in-circuit electrical program and erase
capability. The Smart 3 Advanced Boot Block flash
memory family utilizes a Command User Interface
(CUI) and automated algorithms to simplify program
and erase operations. The CUI allows for 100%
CMOS-level control inputs, fixed power supplies
during erasure and programming, and maximum
EEPROM compatibility.
When V
PP
< V
PPLK
, the device will only execute the
following commands successfully: Read Array,
Read Status Register, Clear Status Register and
Read Intelligent Identifier. The device provides
standard EEPROM read, standby and output
disable operations. Manufacturer identification and
device identification data can be accessed through
the CUI. In addition, 2.7V or 12V on V
PP
allows
program and erase of the device. All functions
associated with altering memory contents, namely
program and erase, are accessible via the CUI.
The internal Write State Machine (WSM) completely
automates program and erase operations while the
CUI signals the start of an operation and the status
register reports status. The CUI handles the WE#
interface to the data and address latches, as well
as system status requests during WSM operation.
3.1
Bus Operation
Smart 3 Advanced Boot Block flash memory
devices read, program and erase in-system via the
local CPU or microcontroller. All bus cycles to or
from the flash memory conform to standard
microcontroller bus cycles. Four control pins dictate
the data flow in and out of the flash component:
CE#, OE#, WE# and RP#. These bus operations
are summarized in Table 3.
Table 3. Bus Operations for Byte-Wide Mode
Mode
Notes
RP#
CE#
OE#
WE#
WP#
A
0
V
PP
DQ
0
–7
Read
1,2,3
V
IH
V
IL
V
IL
V
IH
X
X
X
D
OUT
Output Disable
2
V
IH
V
IL
V
IH
V
IH
X
X
X
High Z
Standby
2
V
IH
V
IH
X
X
X
X
X
High Z
Deep Power-Down
2,9
V
IL
X
X
X
X
X
X
High Z
Intelligent Identifier (Mfr.)
2,4
V
IH
V
IL
V
IL
V
IH
X
V
IL
X
89 H
Intelligent Identifier (Dvc.)
2,4,5
V
IH
V
IL
V
IL
V
IH
X
V
IH
X
See Table 5
Write
2,6,7,
8
V
IH
V
IL
V
IH
V
IL
X
X
V
PPH
D
IN
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Refer to DC Characteristics.
X must be V
IL
, V
IH
for control pins and addresses, V
PPLK
, V
PPH1
or V
PPH2
for V
PP
.
See DC Characteristics for V
PPLK
, V
PPH1
, V
PPH2
voltages.
Manufacturer and device codes may also be accessed via a CUI write sequence, A
1
–A
20
= X
See Table 5 for device IDs.
Refer to Table 6 for valid D
IN
during a write operation.
Command writes for block erase or byte program are only executed when V
PP
= V
PPH1
or V
PPH2
.
To program or erase the lockable blocks, hold WP# at V
IH
. See Section 3.3.
RP# must be at GND
±
0.2V to meet the maximum deep power-down current specified.
相關(guān)PDF資料
PDF描述
28F008S3 3 V FlashFile Memory(3V閃速存儲(chǔ)器)
28F016S3 3 V FlashFile Memory(3V閃速存儲(chǔ)器)
28F008S5 8-MBIT 5 VOLT FlashFile Memory(8M位5V閃速存儲(chǔ)器)
28F016S5 16-MBIT 5V FlashFile Memory(16M位5V閃速存儲(chǔ)器)
28F008SC 8-MBIT SmartVoltage FlashFile Memory(8M位智能電壓閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F008SAT-ZW 制造商: 功能描述: 制造商:undefined 功能描述:
28F008SC 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT
28F010 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:1024K (128K x 8) CMOS FLASH MEMORY
28F0101024K 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
28F010120EI 制造商:Advanced Micro Devices 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*