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參數(shù)資料
| 型號： | 27C800 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆x8或512KB的x16紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 6/17頁 |
| 文件大?。?/td> | 115K |
| 代理商： | 27C800 |
M27C800
6/17
Table 8A. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 5V
±
5% or 5V
±
10%; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Table 8B. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 5V
±
5% or 5V
±
10%; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP.
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27C800
Unit
-50
(3)
-70
-90
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output
Valid
E = V
IL
, G = V
IL
50
70
90
ns
t
BHQV
t
ST
BYTE High to Output
Valid
E = V
IL
, G = V
IL
50
70
90
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
50
70
90
ns
t
GLQV
t
OE
Output Enable Low to
Output Valid
E = V
IL
30
35
45
ns
t
BLQZ(2)
t
STD
BYTE Low to Output Hi-Z
E = V
IL
, G = V
IL
30
30
30
ns
t
EHQZ(2)
t
DF
Chip Enable High to
Output Hi-Z
G = V
IL
0
30
0
30
0
30
ns
t
GHQZ(2)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
0
30
0
30
0
30
ns
t
AXQX
t
OH
Address Transition to
Output Transition
E = V
IL
, G = V
IL
5
5
5
ns
t
BLQX
t
OH
BYTE Low to Output
Transition
E = V
IL
, G = V
IL
5
5
5
ns
Symbol
Alt
Parameter
Test Condition
M27C800
Unit
-100
-120/150
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
100
120
ns
t
BHQV
t
ST
BYTE High to Output Valid
E = V
IL
, G = V
IL
100
120
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
100
120
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
50
60
ns
t
BLQZ(2)
t
STD
BYTE Low to Output Hi-Z
E = V
IL
, G = V
IL
40
50
ns
t
EHQZ(2)
t
DF
Chip Enable High to Output Hi-Z
G = V
IL
0
40
0
50
ns
t
GHQZ(2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
40
0
50
ns
t
AXQX
t
OH
Address Transition to Output Transition
E = V
IL
, G = V
IL
5
5
ns
t
BLQX
t
OH
BYTE Low to Output Transition
E = V
IL
, G = V
IL
5
5
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 27C800 | 8M-BIT [1M x8] CMOS EPROM |
| 27C800 | 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM |
| 27C801 | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| 27CX256WI-45 | x8 EPROM |
| 27CX256C-40 | x8 EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 27C8000-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1M x8] CMOS EPROM |
| 27C8000-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1M x8] CMOS EPROM |
| 27C8000-15 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1M x8] CMOS EPROM |
| 27C801 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| 27C8100-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1M x8/512K x16] CMOS OTP ROM |
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