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參數(shù)資料
| 型號： | 26MB10A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode |
| 中文描述： | Bridge Rectifiers 100 Volt 25 Amp |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 26MB10A |
MB Series
2
Bulletin I2715 rev. G 08/01
www.irf.com
I
O
Maximum DC output current
25
35
A
Resistive or inductive load
20
65
28
60
A
°C
Capacitive load
@ Case temperature
I
FSM
Maximum peak, one-cycle
non-repetitive forward current
400
420
475
500
A
t = 10ms
t = 8.3ms
No voltage
reapplied
335
400
t = 10ms
100% V
RRM
reapplied
350
420
t = 8.3ms
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
790
1130
A
2
s
t = 10ms
No voltage
725
1030
t = 8.3ms
reapplied
560
800
t = 10ms
100% V
RRM
reapplied
512
730
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
5.6
11.3
KA
2
√
s I
2
t for time t
= I
2
√
t x
√
t
x
;
0.1
≤
t
x
≤
10ms, V
RRM
= 0V
V
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), @ T
J
max.
(I >
π
x I
F(AV)
), @ T
J
max.
m
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), @ T
J
max.
(I >
π
x I
F(AV)
), @ T
J
max.
V
T
J
= 25
o
C, I
FM
= I
Favg (arm)
x
π
, tp = 400
μ
s
μ
A
T
J
= 25
o
C, per diode at V
RRM
V
f = 50 Hz, t = 1s
V
F(TO)1
V
F(TO)2
r
t1
r
t2
V
FM
I
RRM
V
INS
Low-level of threshold voltage
0.76
0.79
High-level of threshold voltage
0.92
0.96
Low-level forward slope resistance
6.8
5.8
High-level forward slope resistance
5.0
4.5
Maximum forward voltage drop
1.11
1.14
Max. DC reverse current
10
10
RMS isolation voltage base plate
2700
2700
Forward Conduction
Voltage
Code
V
RRM
, maximum repetitive
peak reverse voltage
V
V
RSM
, maximum non-
repetitive peak rev. voltage
V
I
RRM
max.
@ T
max.
mA
Type number
5
50
100
200
75
150
275
10
20
26MB..A
36MB..A
40
60
80
100
120
140
160
400
600
800
1000
1200
1400
1600
500
725
900
1100
1300
1500
1700
2
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
26MB-A
36MB-A Units Conditions
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