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參數(shù)資料
| 型號： | 2509NZ |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 共漏N溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 109K |
| 代理商： | 2509NZ |
January 2005
2005 Fairchild Semiconductor Corporation
FDW2509NZ Rev C(W)
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench
ò
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V – 12V).
Applications
Li-Ion Battery Pack
Features
7.1 A, 20 V. R
DS(ON)
= 20 m
@ V
GS
= 4.5 V
R
DS(ON)
= 26 m
@ V
GS
= 2.5 V
Extended V
GSS
range (
±
12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Power Dissipation for Single Operation
Ratings
20
±
12
7.1
30
1.6
1.1
–55 to +150
Units
V
(Note 1a)
A
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
114
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2509NZ
FDW2509NZ
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2509Z | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
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