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參數(shù)資料
| 型號(hào)： | 2502P |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 雙P溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 150K |
| 代理商： | 2502P |
December 2003
2003 Fairchild Semiconductor Corporation
FDW2502P Rev. F (W)
FDW2502P
Dual P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V –12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
–4.4 A, –20 V. R
DS(ON)
= 35 m
@ V
GS
= –4.5 V
R
DS(ON)
= 57 m
@ V
GS
= –2.5 V.
Extended V
GSS
range (±12V) for battery applications.
High performance trench technology for extremely
low R
DS(ON)
.
Low profile TSSOP-8 package.
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
12
–4.4
–30
1.0
0.6
-55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
2502P
FDW2502P
(Note 1a)
125
208
°
C/W
(Note 1b)
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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