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參數(shù)資料
| 型號(hào)： | 24N60C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CoolMOS Power Transistor |
| 中文描述： | 的CoolMOS功率晶體管 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 230K |
| 代理商： | 24N60C3 |
SPW24N60C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
0.52
K/W
R
thJA
leaded
-
-
62
Soldering temperature
T
sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=250 μA
600
-
-
V
Avalanche breakdown voltage
V
(BR)DS
V
GS
=0 V,
I
D
=24.3 A
-
700
-
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=1.2 mA
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=600 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=600 V,
V
GS
=0 V,
T
j
=150 °C
-
-
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=15.4 A,
T
j
=25 °C
-
0.14
0.16
V
GS
=10 V,
I
D
=15.4 A,
T
j
=150 °C
-
0.34
-
Gate resistance
R
G
f
=1 MHz, open drain
-
0.7
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=15.4 A
-
24
-
S
Values
Thermal resistance, junction -
ambient
Rev. 1.0
page 2
2004-04-27
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