
 1996 Microchip Technology Inc.
DS21051E-page 1
FEATURES
 Single supply with operation down to 2.5V
 Low power CMOS technology
- 1 mA active current typical
- 10 
μ
A standby current typical at 5.5V
- 5 
μ
A standby current typical at 3.0V
 Organized as two or four blocks of 256 bytes
(2 x 256 x 8) and (4 x 256 x 8)
 2-wire serial interface bus, I
 Schmitt trigger, filtered inputs for noise suppres-
sion
 Output slope control to eliminate ground bounce
 100 kHz (2.5V) and 400 kHz (5V) compatibility
 Self-timed write cycle (including auto-erase)
 Page-write buffer for up to 16 bytes
 2 ms typical write cycle time for page-write
 Hardware write protect for entire memory
 Can be operated as a serial ROM
 Factory programming (QTP) available
 ESD protection > 4,000V
 1,000,000 erase/write cycles guaranteed
 Data retention > 200 years
 8-pin DIP, 8-lead or 14-lead SOIC packages
 Available for extended temperature ranges
- Commercial (C):
- Industrial (I): 
2
C
 compatible
DESCRIPTION
The Microchip Technology Inc. 24LC04B/08B is a 4K or
8K bit Electrically Erasable PROM.  The device is orga-
nized as two or four blocks of 256 x 8-bit memory with
a 2-wire serial interface.  Low voltage design permits
operation down to 2.5 volts with typical standby and
active currents of only 5 
μ
A and 1 mA respectively.  The
24LC04B/08B also has a page-write capability for up to
16 bytes of data.  The 24LC04B/08B is available in the
standard 8-pin DIP and both 8-lead and 14-lead surface
mount SOIC packages.
0
°
°
C to +70
C to +85
°
°
C
C
-40
PACKAGE TYPES
BLOCK DIAGRAM
NC
SS
CC
A0
A1
NC
A2
NC
V
1
2
3
4
5
6
7
14
13
12
NC
SCL
SDA
NC
9
8
11
10
WP
V
NC
14-lead
SOIC
2
2
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
V
CC
WP
SCL
SDA
2
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
V
CC
WP
SCL
SDA
PDIP
8-lead
SOIC
HV GENERATOR
EEPROM ARRAY
(2 x 256 x 8) or 
(4 X 256 X 8)
PAGE LATCHES
YDEC
XDEC
SENSE AMP
R/W CONTROL
MEMORY
CONTROL
LOGIC
I/O
CONTROL
LOGIC
WP
SDA
SCL
V
CC
V
SS
24LC04B/08B
 Serial EEPROMs
4K/8K 2.5V I
2
C
I
2
C is a trademark of Philips Corporation.
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