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| 型號： | 22292A |
| 英文描述： | UltraNAND? Flash for Code Storage Applications |
| 中文描述： | UltraNAND？閃存的代碼存儲應(yīng)用 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 22292A |
8
UltraNAND Flash for Code Storage Applications
Figure 6.
LRU Page Replacement Algorithm
Please note that in Figure 6 the page address LRU
counters actually count physical memory page ac-
cesses and not page replacements or page updates.
When the physical memory pages are all used, the LRU
page replacement logic will assign one of the pages with
the highest count to be replaced. When a physical
memory page is either accessed or replaced the corre-
sponding counter for that page is cleared to zero.
CONCLUSION
In high speed applications and those that require a
lower overall system cost UltraNAND Flash can effec-
tively be used as the system non-volatile code storage.
Shadow memory methods like Full Memory, DM, FIFO,
and LRU can provide the required system performance
and achieve the system design goals.
Trademarks
Copyright 1999 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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Physical Memory Page Access Over Time
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22292A-6
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