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參數(shù)資料
| 型號： | 216MS8E |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz |
| 中文描述： | 砷化鎵微波單片集成電路貼片雙平衡FET混頻器，1.3 - 2.5吉赫 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 245K |
| 代理商： | 216MS8E |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC216MS8
/
216MS8E
GaAs MMIC SMT DOUBLE-BALANCED FET
MIXER, 1.3 - 2.5 GHz
v02.0705
General Description
Features
Functional Diagram
IP3 (Input): +25 dBm @ +11 dBm LO
LO Range = +3 to +11 dBm
Conversion Loss: 8.5 dB
LO / RF Isolation: 32 dB
Electrical Specifications,
T
A
= +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc
Typical Applications
The HMC216MS8 / HMC216MS8E is ideal for:
Base Stations
WirelessLAN
PCMCIA
Portable Wireless
The HMC216MS8 & HMC216MS8E are ultra min-
iature double-balanced FET mixers in 8 lead plastic
surface mount packages (MSOP). This MMIC mixer is
constructed of switched GaAs FETs and novel planar
transformer baluns on the chip. In addition to an LO
drive of +3 to +13 dBm, a gate voltage of Vgg = -0.9
to -1.6 Vdc is required. The device can be used as an
upconverter or downconverter for 1900 or 2400 MHz
applications. The consistent MMIC performance will
improve system operation and assure regulatory com-
pliance.
Parameter
LO = +11 dBm
LO = +7 dBm
LO = +3 dBm
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range, RF & LO
1.3 - 2.5
1.6 - 2.3
1.7 - 2.0
GHz
Frequency Range, IF
DC - 0.65
DC - 0.5
DC - 0.4
GHz
Conversion Loss
9
10.5
8.5
10
9
10.5
dB
Noise Figure (SSB)
9
10.5
8.5
10
9
10.5
dB
LO to RF Isolation
27
30
27
32
27
32
dB
LO to IF Isolation
17
20
17
20
17
20
dB
IP3 (Input)
21
25
14
18
8
12
dBm
1 dB Gain Compression (Input)
8
11
5
10
3
8
dBm
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