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參數(shù)資料
| 型號(hào)： | 20N60B |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | HiPerFAST IGBT的 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 114K |
| 代理商： | 20N60B |
4 - 4
2000 IXYS All rights reserved
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
t
0.001
0.01
0.1
1
D=0.2
D=0.1
D=0.05
V
CE
- Volts
0
100
200
300
400
500
600
I
C
0.1
1
10
100
Q
g
- nanocoulombs
0
20
40
60
80
100
V
G
0
3
6
9
12
15
R
G
- Ohms
0
10
20
30
40
50
60
E
(
0
2
4
6
8
E
(
0
1
2
3
4
I
C
- Amperes
0
10
20
30
40
50
E
(
0
1
2
3
4
5
6
E
(
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
= 300V
I
C
= 10A
I
C
= 20A
E
(ON)
E
(OFF)
T
J
= -55 to +125°C
R
G
= 4.7
dV/dt < 5V/ns
D=0.5
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10
T
J
= 125°C
40
E
(ON)
I
C
=40A
E
(OFF)
T
J
= 125°C
E
(ON)
I
C
= 20A
E
(ON)
E
(OFF)
E
(OFF)
Fig. 7. Dependence of E
ON
and E
OFF
on I
C
.
Fig. 8. Dependence of E
ON
and E
OFF
on R
G
.
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case
IXGH 20N60B
IXGT 20N60B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 20N60BD1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode |
| 20N60G-T3P-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
| 20N60G-T47-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
| 20N60L-T3P-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
| 20N60L-T47-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
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