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參數(shù)資料
| 型號： | 20N60A4 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 600V, SMPS Series N-Channel IGBTsnull |
| 中文描述： | 600V的，開關(guān)電源系列N溝道IGBTsnull |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 219K |
| 代理商： | 20N60A4 |
0
0
1
3
4
5
2
HGT1S20N60A4S
9A
Typical Performance Curves
Unless Otherwise Specified
(Continued)
2.2
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
C
,
2.1
2.0
1.9
1.8
1.7
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
μ
s,
I
CE
= 30A
I
CE
= 20A
I
CE
= 10A
8
9
10
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
C
20
40
60
80
100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
Z
θ
J
10
-2
10
-1
10
0
t
1
t
2
P
D
1
/ t
2
X R
PEAK T
J
D
X Z
θ
JC
θ
JC
C
,
DUTY FACTOR, D = t
= (P
) + T
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
R
G
= 3
μ
H
+
-
L = 500
HGTG20N60A4D
DIODE TA49372
DUT
t
fI
t
t
rI
t
E
E
ON2
d(OFF)I
d(ON)I
10%
90%
10%
90%
OFF
V
GE
V
CE
I
CE
V
DD
= 390V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
2006 Fairchild Semiconductor Corporation
HGT1S20N60A4S
9A
Rev. A
16
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 20N60B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| 20N60BD1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode |
| 20N60G-T3P-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
| 20N60G-T47-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
| 20N60L-T3P-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
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