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參數(shù)資料
| 型號(hào)： | 20N03HL |
| 廠商： | Motorola, Inc. |
| 英文描述： | HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
| 中文描述： | HDTMOS電子FET的高密度功率FET DPAK封裝的表面貼裝 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 250K |
| 代理商： | 20N03HL |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
ID
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
TJ, JUNCTION TEMPERATURE (
°
C)
ID, DRAIN CURRENT (Amps)
ID, DRAIN CURRENT (Amps)
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
VGS, GATE–TO–SOURCE VOLTAGE (Volts)
ID
ID
0
0.4
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
0
10
20
40
Figure 1. On–Region Characteristics
0
10
20
30
40
Figure 2. Transfer Characteristics
0
16
32
40
0.020
0.028
0.036
0.044
0.052
0.020
0.028
0.036
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
– 50
0.8
1.0
1.2
1.8
1
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
30
VGS = 10 V
8 V
6 V
2.5 V
3 V
TJ = 25
°
C
4 V
1.0
1.8
2.6
3.4
4.6
4.2
5.0
VDS
≥
10 V
100
°
C
25
°
C
VGS = 5 V
– 55
°
C
25
°
C
0
16
24
32
40
0.032
0.024
– 25
0
25
50
75
100
125
150
1.4
0
6
12
24
30
18
VGS = 0 V
TJ = 125
°
C
TJ = – 55
°
C
3.0
TJ = 100
°
C
TJ = 25
°
C
VGS = 5 V
10 V
VGS = 5 V
ID = 10 A
1.4
2.2
3.8
100
10
100
°
C
25
°
C
3.5 V
4.5 V
5 V
1.6
8
24
8
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