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參數(shù)資料
| 型號： | 20MT120UF |
| 廠商： | International Rectifier |
| 英文描述： | UltraFast NPT IGBT |
| 中文描述： | 超快速IGBT的不擴(kuò)散核武器條約 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 699K |
| 代理商： | 20MT120UF |
2
20MT120UF
I27124 rev. D 02/03
www.irf.com
V
(BR)CES
V
(BR)CES
/ Temperature Coeff. of
T
J
Breakdown Voltage
V
CE(ON)
Collector-to-Emitter Saturation Voltage
Collector-to-Emitter Breakdown Voltage 1200
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 3mA (25-125°C)
+1.3
V/°C
3.29
4.42
3.87
5.32
3.99
3.59
4.66
4.11
5.70
4.27
6
V
V
GE
= 15V, I
C
= 20A
V
GE
= 15V, I
C
= 40A
V
GE
= 15V, I
C
= 20A T
J
= 125°C
V
GE
= 15V, I
C
= 40A T
J
= 125°C
V
GE
= 15V, I
C
= 20A T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 3mA (25-125°C)
V
GE(th)
V
GE(th)
/ Temperature Coeff. of
T
J
Threshold Voltage
g
fe
Transconductance
I
CES
Zero Gate Voltage Collector Current
(1)
Gate Threshold Voltage
4
V
-14
mV/°C
17.5
S
μA
mA
V
CE
= 50V, I
C
= 20A, PW = 80μs
V
GE
= 0V, V
CE
= 1200V, T
J
= 25°C
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
GE
= ± 20V
250
3.0
9.0
±250
0.7
2.9
I
GES
Gate-to-Emitter Leakage Current
nA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Min
Typ Max Units Test Conditions
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
176
19
89
513
402
915
264
30
134
770
603
1373
nC
I
C
= 20A
V
CC
= 600V
V
GE
= 15V
V
CC
= 600V, I
C
= 20A
V
GE
= 15V, R
g
= 5
, L = 200μH
T
J
= 25°C, Energy losses include tail
and diode reverse recovery
V
CC
= 600V, I
C
= 20A
V
GE
= 15V, R
g
= 5
, L = 200μH
T
J
= 125°C, Energy losses include tail
and diode reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
T
J
= 150°C, I
C
= 120A
V
CC
= 1000V, V
p
= 1200V
R
g
= 5
, V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 900V, V
p
= 1200V
R
g
= 5
, V
GE
= +15V to 0V
μJ
E
on
E
off
E
tot
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
930
610
1540
1395
915
2310
μJ
C
ies
C
oes
C
res
RBSOA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
2530
344
78
3790
516
117
pF
full square
SCSOA
Short Circuit Safe Operating Area
10
μs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Min
Typ Max Units Test Conditions
(1)
I
CES
includes also opposite leg overall leakage
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