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參數(shù)資料
| 型號： | 20ETF10S |
| 英文描述： | 1000V Fast Recovery Diode in a D2-Pak package |
| 中文描述： | 1000V快恢復(fù)二極管在一項D2 - PAK封裝 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 126K |
| 代理商： | 20ETF10S |
4
20ETF..S HV QUIET
IR
Series
I2128 rev. A 01/2000
Fig. 8 - Recovery Time Characteristics, T
J
= 25
°
C
Fig. 9 - Recovery Time Characteristics, T
J
= 150
°
C
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
50
100
150
200
250
300
350
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
P
Initial T = 150
°
C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
20ETF.. Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
50
100
150
200
250
300
350
400
0.01
0.1
1
Pulse Train Duration (s)
P
Versus Pulse Train Duration.
Initial T = 150
°
C
No Voltage Reapplied
Rated V Reapplied
20ETF.. Series
Maximum Non Repetitive Surge Current
1
10
100
1000
0
0.5
1
1.5
2
2.5
3
3.5
4
T = 25
°
C
I
Instantaneous Forward Voltage (V)
T = 150
°
C
20ETF.. Series
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
50
100
150
200
Rate Of Fall Of Forward Current - di/dt (A/μs)
1 A
5 A
10 A
I = 30 A
20 A
M
20ETF.. Series
T = 25
°
C
0
0.3
0.6
0.9
1.2
0
50
100
150
200
Rate Of Fall Of Forward Current - di/dt (A/μs)
1 A
5 A
10 A
I = 30 A
20 A
M
20ETF.. Series
T = 150
°
C
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參數(shù)描述 |
|---|---|
| 20ETF10SPBF | 制造商:Vishay Intertechnologies 功能描述:1000V Fast Recovery Diode D2-Pak |
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| 20ETF10SRTLPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Soft Recovery Rectifier Diode, 20 A |
| 20ETF10SRTT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Soft Recovery Rectifier Diode, 20 A |
| 20ETF10SRTTPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Soft Recovery Rectifier Diode, 20 A |
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