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參數(shù)資料
| 型號(hào)： | 200CYL175 |
| 廠商： | Electronic Devices, Inc. |
| 英文描述： | HIGH VOLTAGE CYLINDER SILICON RECTIFIERS |
| 中文描述： | 高壓缸硅整流 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 200CYL175 |
CYL
100
Storage Temperature Range, T
STG
A
5
Max. DC Reverse Current @ PRV and 100
o
C, I
R
ELECTRICAL CHARACTERISTICS(at T
A
=25 C Unless Otherwise Specified)
HIGH VOLTAGE
CYLINDER SILICON RECTIFIERS
-55 to +125
o
C
o
C
A
Amps
Ambient Operating Temperature Range,T
A
20
FRM
Max.One-Half Cycle Surge Current, I
FM
(Surge )@ 60Hz
Amps
4
Max. DC Reverse Current @ PRV and 25
o
C, I
R
EDI reserves the right to change these specifications at any time whthout notice.
DIFFUSED SILICON JUNCTIONS
PRV 150,000 TO 200,000 VOLTS
AVALANCHE CHARACTERISTICS
LOW LEAKAGE
INTERNAL CAPACITOR COMPENSATION
EDI
NUMBER
PRV
VOLTS
AVERAGE RECTIFIED
FORWARD
CURRENT @50 C
MAX FORWARD
VOLTAGE DROP
@25 C RATED CURRENT
100CYL150
150,000
o
o
100mA
220 VOL TS
100CYL175
175,000
100mA
260 VOL TS
100CYL200
200,000
100mA
295 VOL TS
200CYL150
150,000
200mA
220 VOL TS
200CYL175
175,000
200mA
260 VOL TS
200CYL200
200,000
200mA
295 VOL TS
-55 to +125
o
C
o
C
Forward Current Repetitive Peak, I
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