參數(shù)資料
型號(hào): 1SV228
元件分類: 變?nèi)荻O管
英文描述: 30.5 pF, SILICON, VARIABLE CAPACITANCE DIODE
封裝: 1-3G1F, SC-59, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 153K
代理商: 1SV228
1SV228
2007-11-01
1
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV228
Electronic Tuning Applications of FM Receivers
Low rs: rs = 0.3 (typ.)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
15
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
15
V
Reverse current
IR
VR = 15 V
10
nA
Capacitance
C3 V
VR = 3 V, f = 1 MHz
(Note 1)
28.5
30.5
32.5
pF
Capacitance
C8 V
VR = 8 V, f = 1 MHz
(Note 1)
11.7
12.7
13.7
pF
Capacitance ratio
C3 V/C8 V
(Note 1)
2.1
2.6
Series resistance
rs
VR = 3 V, f = 100 MHz
(Note 1)
0.3
0.5
Ω
Note 1: Characteristics between anode 1 and anode 2
Marking
Unit: mm
JEDEC
JEITA
SC-59
TOSHIBA
1-3G1F
Weight: 0.013 g (typ.)
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