參數(shù)資料
型號(hào)： 1SS396
元件分類： 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述： 0.1 A, 45 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝： 1-3G1G, S-MINI, SC-59, TO-236MOD, 3 PIN
文件頁數(shù)： 1/3頁
文件大小： 177K
代理商： 1SS396
1SS396
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS396
Low Voltage High Speed Switching
Low forward voltage
: VF (3) = 0.54V (typ.)
Low reverse current
: IR = 5μA (max.)
Small package
: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45
V
Reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
150 *
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
125
°C
Operating temperature range
Topr
40
100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1mA
―
0.28
―
VF (2)
―
IF = 10mA
―
0.36
―
Forward voltage
VF (3)
―
IF = 100mA
―
0.54
0.60
V
Reverse current
IR
―
VR = 40V
―
5
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
18
25
pF
Marking
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 0.012g (typ.)
Unit: mm
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