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參數(shù)資料
| 型號(hào)： | 1SS357 |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.1 A, SILICON, SIGNAL DIODE |
| 封裝： | 1-1E1A, SC-70, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 206K |
| 代理商： | 1SS357 |
1SS357
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS357
Low Voltage High Speed Switching
Low forward voltage
: VF (3) = 0.54V (typ.)
Low reverse current
: IR = 5μA (max)
Small package
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45
V
Reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
1
A
Power dissipation
P
200*
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1mA
―
0.28
―
VF (2)
―
IF = 10mA
―
0.36
―
Forward voltage
VF (3)
―
IF = 100mA
―
0.54
0.60
V
Reverse current
IR (1)
―
VR = 40V
―
5
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
18
25
pF
Pin Assignment (Top View)
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004g (typ.)
Unit in mm
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