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參數(shù)資料
| 型號： | 1SS293 |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.1 A, SILICON, SIGNAL DIODE |
| 封裝： | 1-4E2D, SC-61, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 180K |
| 代理商： | 1SS293 |
1SS293
2009-01-27
1
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293
Low-Voltage High-Speed Switching
Low forward voltage:
VF (3) = 0.54 V (typ.)
Low reverse current:
IR = 5 μA (max)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45
V
Reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Power dissipation
P
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage
and
the
significant
change
in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1 mA
―
0.28
―
VF (2)
―
IF = 10 mA
―
0.36
―
Forward voltage
VF (3)
―
IF = 100 mA
―
0.54
0.60
V
Reverse current
IR
―
VR = 40 V
―
5
μA
Total capacitance
CT
―
VR = 0, f = 1 MHz
―
18
25
pF
Unit: mm
Mini
JEDEC
―
JEITA
SC61
TOSHIBA
14E2D
Weight: 0.13 g (typ.)
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