參數(shù)資料
型號: 1SS200
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: 1-4E2B, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 154K
代理商: 1SS200
1SS200
2001-06-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS200
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.92V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance
: CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25
°°°°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10ms)
IFSM
2 (*)
A
Power dissipation
P
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
(*)
Unit Rating. Total Rating = Unit Rating × 1.5.
Electrical Characteristics (Ta = 25
°°°°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1mA
0.61
VF (2)
IF = 10mA
0.74
Forward voltage
VF (3)
IF = 100mA
0.92
1.20
V
IR (1)
VR = 30V
0.1
Reverse current
IR (2)
VR = 80V
0.5
A
Total capacitance
CT
VR = 0, f = 1MHz
2.2
4.0
pF
Reverse recovery time
trr
IF = 10mA (Fig.1)
1.6
4.0
ns
JEDEC
EIAJ
TOSHIBA
1-4E2B
Weight: 0.13g
Unit: mm
相關(guān)PDF資料
PDF描述
1SS201 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
1SS220-T1B 0.1 A, SILICON, SIGNAL DIODE
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1SS220-T2B 0.1 A, SILICON, SIGNAL DIODE
1SS222-T2B 0.1 A, SILICON, SIGNAL DIODE
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