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參數(shù)資料
| 型號： | 1SS106 |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.03 A, 10 V, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 168K |
| 代理商： | 1SS106 |
1SS106
Rev.2.00, Oct.23.2003, page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
10
V
Average rectified current
IO
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward current
IF
4.5
—
mA
VF = 1 V
Reverse current
IR
—
70
A
VR = 6 V
Capacitance
C
—
1.5
pF
VR = 1 V, f = 1 MHz
ESD-Capability
*1
—
100
—
V
C = 200 pF, Both forward and
reverse direction 1 pulse.
Note:
1. Failure criterion; IR ≥ 140 A at VR = 6 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1SS108RG | SILICON, MIXER DIODE, DO-35 |
| 1SS110TAX | SILICON, MIXER DIODE, D0-34 |
| 1SS110 | SILICON, MIXER DIODE, DO-34 |
| 1SS118TD | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
| 1SS119RX | 0.15 A, SILICON, SIGNAL DIODE, DO-34 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1SS106-E | 制造商:Renesas Electronics 功能描述:Diode Schottky 10V 0.03A 2-Pin DO-35 制造商:Renesas Electronics 功能描述:Diode Schottky 10V 0.03A 2-Pin DO-35 Bulk |
| 1SS108 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Various Detector, High Speed Switching |
| 1SS110 | 制造商:Hitachi 功能描述: |
| 1SS118 | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| 1SS119 | 制造商:Renesas Electronics 功能描述:Diode Small Signal Switching 35V 0.15A 2-Pin MHD 制造商:Panasonic Industrial Company 功能描述:DIODE |
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