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參數(shù)資料
| 型號(hào)： | 1SMC5351 |
| 廠商： | Transys Electronics Ltd. |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 中文描述： | 在250μA低電流操作，低反向漏，低噪聲穩(wěn)壓二極管（250μA工作電流，小反向漏電流，低噪聲，齊納二極管） |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 275K |
| 代理商： | 1SMC5351 |
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
LA
P
D
+ T
A
LA
is the lead-to-ambient thermal resistance (
/W)
and P
D
is the power dissipation.
Junction Temperature, T
J
, may be found from:
T
J
= T
L
+
T
JL
T
JL
is the increase in junction temperature above the
lead temperature and may be found from Figure 3 for a
train of power pulses or from Figure 4 for dc power.
T
JL
=
JL
P
D
For worst-case design, using expected limits of Iz, limits
of P
D
and the extremes of T
J
(
T
J
) may be estimated.
Changes in voltage, Vz, can then be found from:
V
=
VZ
T
J
VZ
, the zener voltage temperature coefficient, is fount
from Figures 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly be
the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 3 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots
resulting in device degradation should the limits of
Figure. 5 be exceeded.
相關(guān)PDF資料 |
PDF描述 |
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| 1SMC5352 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1SMC5353 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1SMC5354 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1SMC5355 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1SMC5356 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1SMC5351_R1_00001 | 制造商:PanJit Touch Screens 功能描述: |
| 1SMC5351_R2_00001 | 制造商:PanJit Touch Screens 功能描述: |
| 1SMC5352 | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| 1SMC5352 M6G | 功能描述:DIODE ZENER 15V 5W DO214AB 制造商:taiwan semiconductor corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):不適用於新設(shè)計(jì) 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:15V 容差:±5% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:2.5 Ohms 不同?Vr 時(shí)的電流 - 反向漏電流:1μA @ 11.5V 工作溫度:-55°C ~ 150°C（TJ） 安裝類(lèi)型:表面貼裝 封裝/外殼:DO-214AB，SMC 供應(yīng)商器件封裝:DO-214AB（SMC） 標(biāo)準(zhǔn)包裝:3,000 |
| 1SMC5352 R7G | 功能描述:DIODE ZENER 15V 5W DO214AB 制造商:taiwan semiconductor corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):不適用於新設(shè)計(jì) 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:15V 容差:±5% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:2.5 Ohms 不同?Vr 時(shí)的電流 - 反向漏電流:1μA @ 11.5V 工作溫度:-55°C ~ 150°C（TJ） 安裝類(lèi)型:表面貼裝 封裝/外殼:DO-214AB，SMC 供應(yīng)商器件封裝:DO-214AB（SMC） 標(biāo)準(zhǔn)包裝:850 |
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