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參數(shù)資料
| 型號： | 1SMB2EZ9.1T/R13 |
| 元件分類： | 齊納二極管 |
| 英文描述： | 9.1 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 350K |
| 代理商： | 1SMB2EZ9.1T/R13 |
PAGE . 3
STAD-FEB.10.2009
1
1SMB2EZ6.8~1SMB2EZ51
APPLICATION NOTE:
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction
temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended:
Lead Temperature, T , should be determined from:
T= LA P + T
L is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for L will vary and depends
on the device mounting method.
L is generally 30-40 C/W for the various clips and tie points in common use and for printed
circuit board wiring.
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of
TL, the junction temperature may be determined by:
T= T + T
T
is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses
or from Figure 10 for dc power.
T= J P
For worst-case design, using expected limits of I , limits of P and the extremes of T ( T ) may be estimated. Changes in voltage,
V , can then be found from:
V= V
T
V , the zener voltage temperature coefficient, is found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance.
For best regulation, keep current excursions as low as possible.
Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than would
be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small
spots resulting in device degradation should the limits of Figure 3 be exceeded.
L
LD
A
JL
Z
q
D
Dq
D
Dq
D
q
O
JL
L
D
ZD
J
Z
ZJ
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1SMB30 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Zener Overvoltage Transient Suppressors |
| 1SMB30A | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 5.0 THRU 170 VOLTS |
| 1SMB30A TR13 | 功能描述:TVS DIODE 30VWM 48.4VC SMB 制造商:central semiconductor corp 系列:- 包裝:剪切帶（CT） 零件狀態(tài):停產(chǎn) 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關(guān)態(tài)（典型值）:30V 電壓 - 擊穿（最小值）:33.3V 電壓 - 箝位（最大值）@ Ipp:48.4V 電流 - 峰值脈沖（10/1000μs）:12.4A 功率 - 峰值脈沖:600W 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時的電容:- 工作溫度:-65°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:DO-214AA，SMB 供應(yīng)商器件封裝:SMB 標(biāo)準(zhǔn)包裝:1 |
| 1SMB30AT3 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 30V 600W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1SMB30AT3G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 30V 600W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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