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1S1832
2006-11-07
1
TOSHIBA Rectifier Silicon Diffused Type
1S1832
High-Speed Rectifier Applications (fast recovery)
Average Forward Current: IF (AV) = 0.7 A (Ta = 50°C)
Repetitive Peak Reverse Voltage: VRRM = 1800 V
Reverse Recovery Time: trr = 6.0 s
Plastic Mold Type
Absolute Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
1800
V
Reverse voltage (DC)
VR
1500
V
Average forward current (Ta
= 50°C)
IF (AV)
0.7
A
60 (50 Hz)
Peak one cycle surge forward current
(non-repetitive)
IFSM
66 (60 Hz)
A
Junction temperature
Tj
40 to 125
°C
Storage temperature range
Tstg
40 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 1.5 A
2.0
V
IRRM (1)
VRRM = 1500 V
10
Repetitive peak reverse current
IRRM (2)
VRRM = 1500 V, Tj = 125°C
400
A
Reverse recovery time
trr
IF = 20 mA, IR = 1 mA
6.0
s
Note 1: Lead diameter not controlled in this zone to allow for flash, lead finish build-up and minor irregularities other
than slugs.
Note 2: Soldering: 5 mm is the minimum to be kept between the case and the soldered part.
Note 3: Lead bending: 5 mm is the minimum to be kept from the case when bending lead wires.
Unit: mm
JEDEC
DO-15
JEITA
SC-39
TOSHIBA
3-3B1A
Weight: 0.42 g (typ.)