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參數(shù)資料
| 型號： | 1PMT5920BT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3.2 Watt Plastic Surface Mount POWERMITE Package |
| 中文描述： | 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA |
| 封裝： | PLASTIC, CASE 457-04, POWERMITE, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 1PMT5920BT1 |
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
1PMT5920B Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Power Dissipation @ T
A
= 25
°
C (Note 1)
Derate above 25
°
C
Thermal Resistance from Junction to Ambient
°
P
D
°
R
JA
500
4.0
248
°
mW
mW/
°
C
°
C/W
Thermal Resistance from Junction to Lead (Anode)
R
Janode
35
°
C/W
Maximum DC Power Dissipation (Note 2)
Thermal Resistance from Junction to Tab (Cathode)
°
P
D
°
R
Jcathode
3.2
23
W
°
C/W
Operating and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
1. Mounted with recommended minimum pad size, PC board FR4.
2. At Tab (Cathode) temperature, T
tab
= 75
°
C
ELECTRICAL CHARACTERISTICS
(T
L
= 25
°
C unless
otherwise noted, V
F
= 1.5 V Max. @ I
F
= 200 mAdc for all types)
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS
(T
L
= 30
°
C unless otherwise noted, V
F
= 1.25 Volts @ 200 mA)
Zener Voltage
(Note 3)
Z
ZT
@ I
ZT
(Note 4)
Z
ZK
@ I
ZK
(Note 4)
Device
Marking
V
Z
@ I
ZT
(Volts)
I
ZT
(mA)
I
R
@ V
R
( A)
V
R
(V)
I
ZK
(mA)
Device
Min
Nom
Max
( )
( )
1PMT5920BT1, T3
20B
5.89
6.2
6.51
60.5
5.0
4.0
2.0
200
1.0
1PMT5921BT1, T3
21B
6.46
6.8
7.14
55.1
5.0
5.2
2.5
200
1.0
1PMT5922BT1, T3
22B
7.12
7.5
7.88
50
5.0
6.0
3.0
400
0.5
1PMT5923BT1, T3
23B
7.79
8.2
8.61
45.7
5.0
6.5
3.5
400
0.5
1PMT5924BT1, T3
24B
8.64
9.1
9.56
41.2
5.0
7.0
4.0
500
0.5
1PMT5925BT1, T3
25B
9.5
10
10.5
37.5
5.0
8.0
4.5
500
0.25
1PMT5927BT1, T3
27B
11.4
12
12.6
31.2
1.0
9.1
6.5
550
0.25
1PMT5929BT1, T3
29B
14.25
15
15.75
25
1.0
11.4
9.0
600
0.25
1PMT5930BT1, T3
30B
15.2
16
16.8
23.4
1.0
12.2
10
600
0.25
1PMT5931BT1, T3
31B
17.1
18
18.9
20.8
1.0
13.7
12
650
0.25
1PMT5933BT1, T3
33B
20.9
22
23.1
17
1.0
16.7
17.5
650
0.25
1PMT5934BT1, T3
34B
22.8
24
25.2
15.6
1.0
18.2
19
700
0.25
1PMT5935BT1, T3
35B
25.65
27
28.35
13.9
1.0
20.6
23
700
0.25
1PMT5936BT1, T3
36B
28.5
30
31.5
12.5
1.0
22.8
28
750
0.25
1PMT5939BT1, T3
39B
37.05
39
40.95
9.6
1.0
29.7
45
900
0.25
1PMT5941BT1, T3
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25
°
C.
4. Zener Impedance Derivation Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The
specified limits are for I
Z
(ac) = 0.1 I
Z
(dc) with the ac frequency = 60 Hz.
41B
44.65
47
49.35
8.0
1.0
35.8
67
1000
0.25
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| 1PMT5922BT1 | 3.2 Watt Plastic Surface Mount POWERMITE Package |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1PMT5920BT1G | 功能描述:穩(wěn)壓二極管 6.2V 3.2W Powermite RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1PMT5920BT3 | 功能描述:穩(wěn)壓二極管 6.2V 3.2W Powermite RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1PMT5920BT3/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.2 Watt Plastic Surface Mount POWERMITE? Package |
| 1PMT5920BT3G | 功能描述:穩(wěn)壓二極管 ZEN PWMITE REG RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1PMT5920BT3G | 制造商:ON Semiconductor 功能描述:TVS DIODE |
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