參數(shù)資料
型號： 1PMT36AT1
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： Zener Transient Voltage Suppressor POWERMITE Package
中文描述： 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA
封裝： PLASTIC, CASE 457-04, POWERMITE, 2 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 57K
代理商： 1PMT36AT1
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1PMT5.0AT1/T3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Maximum P
pk
Dissipation, (PW10/1000 s) (Note 1) (1PMT5.0A 1PMT36A)
P
pk
200
W
Maximum P
pk
Dissipation, (PW10/1000 s) (Note 1) (1PMT40A 1PMT58A)
P
pk
175
W
Maximum P
pk
Dissipation, (PW8/20 s) (Note 1)
P
pk
1000
W
DC Power Dissipation @ T
A
= 25
°
C (Note 2)
Derate above 25
°
C
Thermal Resistance from JunctiontoAmbient
°
P
D
°
R
JA
500
4.0
248
°
mW
mW/
°
C
°
C/W
Thermal Resistance from JunctiontoLead (Anode)
R
Janode
35
°
C/W
Maximum DC Power Dissipation (Note 3)
Thermal Resistance from Junction to Tab (Cathode)
°
P
D
°
R
Jcathode
3.2
23
W
°
C/W
Operating and Storage Temperature Range
1. Nonrepetitive current pulse at T
= 25
°
C.
2. Mounted with recommended minimum pad size, DC board FR4.
3. At Tab (Cathode) temperature, T
tab
= 75
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 4) = 35 A)
T
J
, T
stg
55 to +150
°
C
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS
(T
L
= 30
°
C unless otherwise noted, V
F
= 1.25 Volts @ 200 mA)
V
RWM
V
BR
@ I
T
(V)
(Note 6)
I
T
I
R
@ V
RWM
V
C
@ I
PP
I
PP
(A)
Device
Marking
MKE
MKM
MLE
MLP
MLT
MLX
MLZ
MME
MMG
MMK
MMM
MMP
MMR
MMX
MMZ
MNG
(Note 5)
Min
Nom
Max
(mA)
( A)
(V)
(Note 7)
1PMT5.0AT1, T3
1PMT7.0AT1, T3
1PMT12AT1, T3
1PMT16AT1, T3
1PMT18AT1, T3
1PMT22AT1, T3
1PMT24AT1, T3
1PMT26AT1, T3
1PMT28AT1, T3
1PMT30AT1, T3
1PMT33AT1, T3
1PMT36AT1, T3
1PMT40AT1, T3
1PMT48AT1, T3
1PMT51AT1, T3
1PMT58AT1, T3
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
RWM
) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at ambient temperature of 25
°
C.
7. Surge current waveform per Figure 2 and derate per Figure 4.
5.0
7.0
12
16
18
22
24
26
28
30
33
36
40
48
51
58
6.4
7.78
13.3
17.8
20.0
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
53.3
56.7
64.4
6.7
8.2
14.0
18.75
21.0
25.6
28.1
30.4
32.8
35.1
38.7
42.1
46.8
56.1
59.7
67.8
7.0
8.6
14.7
19.7
22.1
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
58.9
62.7
71.2
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
800
500
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
9.2
12
19.9
26
29.2
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
77.4
82.4
93.6
21.7
16.7
10.1
7.7
6.8
5.6
5.1
4.8
4.4
4.1
3.8
3.4
2.7
2.3
2.1
1.9
相關PDF資料
PDF描述
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
1PMT36AT1G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package
1PMT36AT3 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package
1PMT36AT3G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package
1PMT4099 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LOW NOISE 1 WATT Zener Diodes
1PMT4099/TR13 功能描述:DIODE ZENER 6.8V 1W DO216 制造商:microsemi corporation 系列:POWERMITE? 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標稱值）（Vz）:6.8V 容差:±5% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:200 歐姆 不同?Vr 時的電流 - 反向漏電流:10μA @ 5.17V 不同 If 時的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應商器件封裝:DO-216 標準包裝:12,000
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