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參數(shù)資料
| 型號： | 1PMT33AT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Zener Transient Voltage Suppressor POWERMITE Package |
| 中文描述： | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| 封裝： | LEAD FREE, PLASTIC, CASE 457-04, POWERMITE, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 72K |
| 代理商： | 1PMT33AT1G |
1PMT5.0AT1/T3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Maximum P
pk
Dissipation, (PW10/1000 s) (Note 1) (1PMT5.0A 1PMT36A)
P
pk
200
W
Maximum P
pk
Dissipation, (PW10/1000 s) (Note 1) (1PMT40A 1PMT58A)
P
pk
175
W
Maximum P
pk
Dissipation, (PW8/20 s) (Note 1)
DC Power Dissipation @ T
A
= 25
°
C (Note 2)
Derate above 25
°
C
Thermal Resistance, JunctiontoAmbient
P
pk
1000
W
°
P
D
°
R
JA
500
4.0
248
°
mW
mW/
°
C
°
C/W
Thermal Resistance, JunctiontoLead (Anode)
R
Janode
°
P
D
°
R
Jcathode
35
°
C/W
Maximum DC Power Dissipation (Note 3)
Thermal Resistance, JunctiontoTab (Cathode)
3.2
23
W
°
C/W
Operating and Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse at T
A
= 25
°
C.
2. Mounted with recommended minimum pad size, DC board FR4.
3. At Tab (Cathode) temperature, T
tab
= 75
°
C
T
J
, T
stg
55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 4) = 35 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
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| 1PMT40AT1G | Zener Transient Voltage Suppressor POWERMITE Package |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1PMT33AT3 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 33V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1PMT33AT3G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 33V 200W Powermite Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1PMT36AT1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 36V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1PMT36AT1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package |
| 1PMT36AT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package |
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