參數(shù)資料
型號(hào): 1PMT26AT3
廠商: ON SEMICONDUCTOR
元件分類(lèi): 參考電壓二極管
英文描述: Zener Overvoltage Transient Suppressor(峰值功率175W,塑料表貼封裝,30.4V峰值反向電壓,齊納瞬變電壓抑制器)
中文描述: 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA
封裝: PLASTIC, CASE 457-04, POWERMITE, 2 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 64K
代理商: 1PMT26AT3
1PMT5.0AT1/T3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Maximum P
pk
Dissipation, (PW10/1000 s) (Note 1) (1PMT5.0A 1PMT36A)
P
pk
200
W
Maximum P
pk
Dissipation, (PW10/1000 s) (Note 1) (1PMT40A 1PMT58A)
P
pk
175
W
Maximum P
pk
Dissipation, (PW8/20 s) (Note 1)
DC Power Dissipation @ T
A
= 25
°
C (Note 2)
Derate above 25
°
C
Thermal Resistance, JunctiontoAmbient
P
pk
1000
W
°
P
D
°
R
JA
500
4.0
248
°
mW
mW/
°
C
°
C/W
Thermal Resistance, JunctiontoLead (Anode)
R
Janode
°
P
D
°
R
Jcathode
35
°
C/W
Maximum DC Power Dissipation (Note 3)
Thermal Resistance, JunctiontoTab (Cathode)
3.2
23
W
°
C/W
Operating and Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse at T
= 25
°
C.
2. Mounted with recommended minimum pad size, DC board FR4.
3. At Tab (Cathode) temperature, T
tab
= 75
°
C
T
J
, T
stg
55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 4) = 35 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
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