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參數(shù)資料
| 型號(hào)： | 1N829UR-1 |
| 元件分類(lèi)： | 齊納二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 表面貼裝硅穩(wěn)壓二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 1N829UR-1 |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
CDI
ZENER
MAXIMUM
VOLTAGE
EFFECTIVE
TYPE
VOLTAGE
TEST
ZENER
TEMPERATURE
NUMBER
CURRENT
IMPEDANCE
STABILITY
COEFFICIENT
V
Z
@ I
ZT
I
ZT
(Note 1)
V
ZT
Z
ZT
-55° to +100°
(Note 2)
VOLTS
mA
OHMS
mV
% / °C
CDLL821
5.9 - 6.5
7.5
15
96
0.01
CDLL821A
5.9 - 6.5
7.5
10
96
0.01
CDLL822
5.9 - 6.5
7.5
15
96
0.01
CDLL823
5.9 - 6.5
7.5
15
48
0.005
CDLL823A
5.9 - 6.5
7.5
10
48
0.005
CDLL824
5.9 - 6.5
7.5
15
48
0.005
CDLL825
5.9 - 6.5
7.5
15
19
0.002
CDLL825A
5.9 - 6.5
7.5
10
19
0.002
CDLL826
6.2 - 6.9
7.5
15
20
0.002
CDLL827
5.9 - 6.5
7.5
15
9
0.001
CDLL827A
5.9 - 6.5
7.5
10
9
0.001
CDLL828
6.2 - 6.9
7.5
15
10
0.001
CDLL829
5.9 - 6.5
7.5
15
5
0.0005
CDLL829A
5.9 - 6.5
7.5
10
5
0.0005
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
lR = 2
A @ 25°C & V
R = 3 Vdc
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
Double Anode: Electrical Specifications Apply Under Both Bias Polarities.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current
equal to 10% of lZT.
NOTE 2
The maximum allowable change observed over the entire temperature range i.e.,
the diode voltage will not exceed the specified mV at any discrete temperature
between the established limits, per JEDEC standard No.5.
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 AND 1N829UR-1 AVAILABLE
IN
JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159
TEMPERATURE COMPENSATED ZENER DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
6.2 AND 6.55 VOLT NOMINAL ZENER VOLTAGES
METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N821UR-1 thru 1N829UR-1
and
CDLL821 thru CDLL829A
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N829 | TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
| 1N914 | High-speed diode |
| 1N914 | SWITCHING DIODE |
| 1N914 | SILICON EPITAXIAL PLANAR DIODES |
| 1N914 | HIGH SPEED SILICON SWITCHING DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N829UR-1-1 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
| 1N829UR-1-2 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
| 1N829UR-1TR | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
| 1N829URTR | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
| 1N829URTR-1 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
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