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參數(shù)資料
| 型號(hào)： | 1N6642CSM-JQRS.CVB |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.3 A, 75 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC1-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 567K |
| 代理商： | 1N6642CSM-JQRS.CVB |
SILICON EPITAXIAL
PLANAR DIODE
1N6642CSM
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 3588
Issue 2
Page 3 of 4
MECHANICAL DATA
Dimensions in mm (inches)
* The additional contact provides a connection to the lid in the application. Connecting the metal lid to a known electrical potential stops deep
dielectric discharge in space applications; see the Space Weather link www.semelab.co.uk/mil/lcc1_4 on the Semelab web site. Package variant to
be specified at order.
Other Package Outlines may be available – Contact Semelab Sales to Enquire
2
1
0.51 ± 0.10
(0.02 ± 0.004)
R0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
.5
4
±
0
.1
3
(0
.1
0
±
0
.0
0
5
)
0
.7
6
±
0
.1
5
(0
.0
3
±
0
.0
0
6
)
1.40
(0.055)
max.
0.31
(0.012)
rad.
3
1.02 ± 0.10
(0.04 ± 0.004)
2
1
0.51 ± 0.10
(0.02 ± 0.004)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
.5
4
±
0
.1
3
(0
.1
0
±
0
.0
0
5
)
0
.7
6
±
0
.1
5
(0
.0
3
±
0
.0
0
6
)
1.40
(0.055)
max.
0.31
(0.012)
rad.
R0.31
(0.012)
3
1.02 ± 0.10
(0.04 ± 0.004)
4
R
0.
56
(0
.0
22
)
LCC1
(Underside View)
Pad 1 - Anode
Pad 2 – N/C
Pad 3 - Cathode
LCC1-4
(Underside View)
Pad 1 - Anode
Pad 2 – N/C
Pad 3 – Cathode
Pad 4 –Lid Contact Ground *
Note: If required, must be requested at time of order
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6642D1A | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| 1N6642D2A | 制造商:TT Electronics/ Semelab 功能描述:DIODE HI-REL 100V 0.3A DLCC2 制造商:TT Electronics/ Semelab 功能描述:DIODE, HI-REL, 100V, 0.3A, DLCC2 制造商:SEMELAB 功能描述:DIODE, HI-REL, 100V, 0.3A, DLCC2; Diode Type:Switching; Forward Current If(AV):100mA; Repetitive Reverse Voltage Vrrm Max:75V; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:5ns; Forward Surge Current Ifsm Max:2.5A ;RoHS Compliant: Yes |
| 1N6642D2B | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| 1N6642JANTX | 制造商:Microsemi Corporation 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述: |
| 1N6642U | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:DIODE SWITCHING |
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