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參數(shù)資料
| 型號(hào)： | 1N6639US |
| 英文描述： | SWITCHING DIODES |
| 中文描述： | 開(kāi)關(guān)二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | 1N6639US |
V F
@
I F
TYPES
VdC
mA
MIN
MAX
(PULSED)
1N6639US
–
1.20
500
0.54
0.62
1
1N6640US
0.76
0.86
50
0.82
0.92
100
0.87
1.00
200
1N6641US
–
1.10
200
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
V BRR
V RWM
I R1
I R2
T FR
T RR
CT
TYPES
@ 10 A
@ TA = +25°C @ TA = +150°C
IF
I R = 10 mA
VR = 0
VR =VR =
= 200 mA
I F = 10 mA
V RWM
RL = 100
V(pk)
nA dc
A dc
ns
pF
1N6639US
100
75
100
10
4.0
2.5
1N6640US
75
50
100
10
4.0
2.5
1N6641US
75
50
100
10
5.0
3.0
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: I
FSM = 2.5A, P
w = 8.3ms
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specied.
FORWARD VOLTAGE:
1N6639US THRU 1N6641US AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/609
SWITCHING DIODES
NON-CAVITY GLASS PACKAGE
METALLURGICALLY BONDED
1N6639US
1N6640US
1N6641US
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/609
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 25
C/W maximum
POLARITY: Cathode end is banded
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN MAX
D
1.78
2.16
0.070 0.085
F
0.48
0.71
0.019 0.028
G
4.19
4.95
0.165 0.195
S
0.08MIN.
0.003MIN.
FIGURE 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N6640 | SWITCHING DIODES |
| 1N6759 | 1 AMP SCHOTTKY BARRIER RECTIFIERS |
| 1N6760 | 1 AMP SCHOTTKY BARRIER RECTIFIERS |
| 1N6761 | 1 AMP SCHOTTKY BARRIER RECTIFIERS |
| 1N6858UR-1 | SCHOTTKY BARRIER DIODES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6639USJANTXV | 制造商:Microsemi Corporation 功能描述: |
| 1N663A | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:GENERAL PURPOSE DIFFUSED SILICON PLANAR DIODES |
| 1N6640 | 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE D LAW - Bulk |
| 1N6640609C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SIGNAL OR COMPUTER DIODE |
| 1N6640D2A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL PLANAR DIODE |
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