
VOIDLESS-HERMETICALLYSEALED 
SURFACE MOUNT ULTRA FAST 
RECOVERY GLASS RECTIFIERS
W
M
.
C
SCOTTSDALE
DIVISION 
1N6620US thru 1N6625US 
1
DES CRIPT ION 
APPEARANCE 
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be 
tolerated.  These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working 
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond.  These devices 
are also available in axial-leaded packages for thru-hole mounting (see separate 
data sheet for 1N6620 thru 1N6625).  Microsemi also offers numerous other rectifier 
products to meet higher and lower current ratings with various recovery time speed 
requirements including standard, fast and ultrafast device types in both through-hole 
and surface mount packages.
IMPORTANT:  
For the most current data, consult 
MICROSEMI’s 
 website:  
Package “A”    or D-5A 
FEAT URES  
APPLICAT IONS  / BENEFITS  
Surface mount series equivalent to the JEDEC 
registered 1N6620 to 1N6625 series 
Voidless hermetically sealed glass package 
Extremely robust construction 
Triple-layer passivation 
Internal “
Category I”
 Metallurgical bonds 
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585 
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g. 
MSP6620US, MSP6624US, etc.     
Axial-leaded equivalents also available (see separate 
data sheet for 1N6620 thru 1N6625) 
MAX IMUM RATINGS  
 Junction Temperature:  -65
o
C to +175
o
C  
 Storage Temperature:  -65
o
C to +175
o
C  
 Peak Forward Surge Current @ 25
o
C:  20 Amps (except 
1N6625 which is 15 Amps) 
       Note:  Test pulse = 8.3 ms, half-sine wave. 
 Average Rectified Forward Current (I
O
) at T
EC
=+110
o
C:  
  1N6620 thru 1N6622:   2.0 Amps 
  1N6623 thru 1N6625:   1.5 Amps 
   (Derate linearly at 1.5%/
o
C for T
EC 
> +110
o
C)  
 Average Rectified Forward Current (I
O
) at T
A
=25
o
C:    
  1N6620 thru 1N6622:   1.2 Amps 
  1N6623 thru 1N6625:   1.0 Amp 
      (Derate linearly at 0.67%/
 o
C for T
A
>+25
o
C.  This I
O
rating is typical for PC boards where thermal resistance 
from mounting point to ambient is sufficiently controlled 
where T
J(max) 
is not exceeded.) 
 Thermal Resistance junction to endcap (R
θ
JEC
): 20
o
C/W  
 Capacitance at V
R
= 10 V:  10 pF 
 Solder temperature:  260
o
C for 10 s (maximum) 
Ultrafast recovery rectifier series 200 to 1000 V 
Military and other high-reliability applications 
Switching power supplies or other applications 
requiring extremely fast switching & low forward 
loss 
High forward surge current capability 
Low thermal resistance 
Controlled avalanche with peak reverse power 
capability 
Inherently radiation hard
 as described in Microsemi 
MicroNote 050
MECHANICAL AND PACK AGING 
CASE:  Hermetically sealed voidless hard glass 
with Tungsten slugs 
TERMINATIONS:  End caps are solid Silver (Ag) 
with Tin/Lead (Sn/Pb) finish 
MARKING:  Cathode band only 
POLARITY:  Cathode indicated by band 
Tape & Reel option:  Standard per EIA-481-B 
Weight:  193 mg 
See package dimensions and recommended pad 
layout on last page 
Microsemi 
Scottsdale Division 
Page 1
Copyright 
 2005 
6-19-2005 REV B 
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503