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參數(shù)資料
| 型號： | 1N6379 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, MOSORB, CASE 41A-04, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 139K |
| 代理商： | 1N6379 |
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 Fax: 760-564-2414
ICTE5.0 to ICTE15C MPTE-5 to MP
T
E-45
1N6373 to 1N6381 and 1N6382 to 1N6389
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
STANDOFF VOLTAGE- 5.0 to 45.0V
1500 Watt Peak Power
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94 V-O
Glass passivated chip junction in Molded Plastic package
1500W surge capability at 1ms
Excellent clamping capability
Low zener inpedance
Fast response time: typically less than
1.0 ps from 0 volts to BV min.
Typical IR less than 1μA above 10V
High temperature soldering guaranteed:
250°C/10 seconds/ .375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
Includes 1N6373 thru 1N6385
MECHANICAL DATA
Case: JEDEC DO-201 Molded plastic
Terminals: Plated Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.045 ounces, 1.2 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms
(NOTE 1)
Peak Pulse Current of on 10/1000 μs waveform
(Note 1)
Steady State Power Dissipation at
T
L
= 75°C
Lead lengths .375", 9.5mm
(Note 2)
SYMBOL
VALUE
UNITS
Ippm
SEE TABLE 1
Amps
Superimposed on Rated Load,
(JEDEC Method)(Note 3)
Maximum instantaneous forward voltage at 100A for
unidirectional only
Operatings and Storage Temperature Range
Tj, Tstg
-55 +175
°C
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.
Volt
Vf
3.5
I
FSM
200
Amps
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Watts
P
ppm
Minimum 1500
Watts
P
m(AV)
5.0
8/6/2002
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| 1N6379G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 25.9V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6379RL4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 25.9V 1500W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6379RL4G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 25.9V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6380 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 42.2V 1500W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6380G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 42.2V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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