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參數(shù)資料
| 型號： | 1N6318 |
| 英文描述： | MSTBV 2,5/13-GF |
| 中文描述： | 500 mW齊納二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 108K |
| 代理商： | 1N6318 |
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/533
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 C/W maximum
THERMAL IMPEDANCE: (ZOJX): 15
C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN MAX
D
1.78
2.16
0.070 0.085
F
0.48
0.71
0.019 0.028
G
4.19
4.95
0.165 0.195
S
0.08MIN.
0.003MIN.
FIGURE 1
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/533
500 mW ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6309US
THRU
1N6320US
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 500 mW@TEC=+125C
Power Derating: 10 mW/°C above TEC=+125C
Forward Voltage: 1.4V dc @ IF=1A dc (pulsed)
VZ2
VZ1
IZ2
ZZ
ZZK
IZM
VZ (reg)
IZSM
VR
IR1
IR2
ND
NOM.
MIN.
TEST
@
SURGE
@
@250
A
TYPE
±5% @
@IZ1
CURRENT
IZ2
250
A
v VZ
25C
TA=
1-3 kHz
IZ2
250
A
(1)
150C
VOLTS
mA
OHMS
mA
VOLTS
AMPS
VOLTS
A
A V/ Hz
1N6309US
2.4
1.1
20
30
1200
177
1.5
2.5
1.0
100
200
1.0
1N6310US
2.7
1.2
20
30
1300
157
1.5
2.2
1.0
60
150
1.0
1N6311US
3.0
1.3
20
29
1400
141
1.5
2.0
1.0
30
100
1.0
1N6312US
3.3
1.5
20
24
1400
128
1.6
1.8
1.0
5.0
20
1.0
1N6313US
3.6
1.8
20
22
1400
117
1.6
1.65
1.0
3.0
12
1.0
1N6314US
3.9
2.0
20
1700
108
1.6
1.5
1.0
2.0
12
1.0
1N6315US
4.3
2.4
20
18
1400
99
0.9
1.4
1.0
2.0
12
1.0
1N6316US
4.7
2.8
20
16
1500
90
0.5
1.27
1.5
5.0
12
1.0
1N6317US
5.1
3.3
20
14
1300
83
0.4
1.17
2.0
5.0
12
1.0
1N6318US
5.6
4.3
20
8.0
1200
76
0.4
1.10
2.5
5.0
10
2.0
1N6319US
6.2
5.2
20
3.0
800
68
0.3
0.97
3.5
5.0
10
5.0
1N6320US
6.8
6.0
20
3.0
400
63
0.35
1.23
4.0
2.0
50
5.0
NOTE 1:
v VZ = VZ @ 20 mAdc minus VZ @ 2mAdc
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N6319 | MSTBV 2,5/15-GF |
| 1N6319US | MSTBV 2,5/16-GF |
| 1N6320 | MSTBV 2,5/18-GF |
| 1N6320US | MSTBV 2,5/19-GF |
| 1N6485US | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6318US | 制造商:Microsemi Corporation 功能描述:ZENER SGL 5.6V 5% 500MW 2PIN D-5D - Bulk |
| 1N6319 | 制造商:Microsemi Corporation 功能描述:ZENER SGL 6.2V 5% 500MW 2PIN DO-35 - Bulk |
| 1N6319US | 制造商:Microsemi Corporation 功能描述:Diode Zener Single 6.2V 5% 500mW 2-Pin B-MELF 制造商:Microsemi Corporation 功能描述:ZENER SGL 6.2V 5% 500MW 2PIN D-5D - Bulk |
| 1N632 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GOLD BONDED DIODES(Low forward voltage, low power consumption) |
| 1N6320 | 制造商:Microsemi Corporation 功能描述:ZENER SGL 6.8V 5% 500MW 2PIN DO-35 - Bulk |
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