參數(shù)資料
型號(hào)： 1N6131AUS
廠商： SENSITRON SEMICONDUCTOR
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝： MELF-2
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 0K
代理商： 1N6131AUS
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5074, REV. –
Transient Voltage Suppressor Diode, 500W
Hermetic, non-cavity glass package
Metallurgically bonded
Operating and Storage Temperature: -55oC to +175oC
SJ
SX
SV
SERIES
TYPE
MIN
BREAKDOWN
VOLTAGE
V(BR) @ I(BR)
WORKING
PEAK REVERSE
VOLTAGE
VRWM
MAXIMUM
REVERSE
CURRENT
IR1
MAX. CLAMP.
VOLTAGE
VC @ IP
tp = 1ms
MAX. PEAK
PULSE
CURRENT
IP
MAX. TEMP.
COEFFICIENT
V(BR)
500W
Vdc
mA dc
Vdc
Adc
V(pk)
A(pk)
% /
°C
1N6102A/US
6.12
175
5.2
500
10.5
142.8
.05
1N6103A/US
7.13
175
5.7
300
11.2
133.9
.06
1N6104A/US
7.79
150
6.2
100
12.1
124.0
.06
1N6105A/US
8.65
150
6.9
100
13.4
111.9
.06
1N6106A/US
9.50
125
7.6
100
14.5
103.4
.07
1N6107A/US
10.45
125
8.4
20
15.6
96.2
.07
1N6108A/US
11.40
100
9.1
20
16.9
88.8
.07
1N6109A/US
12.35
100
9.9
20
18.2
82.4
.08
1N6110A/US
14.25
75
11.4
20
21.0
71.4
.08
1N6111A/US
15.20
75
12.2
20
22.3
67.3
.08
1N6112A/US
17.10
65
13.7
10
25.1
59.8
.085
1N6113A/US
19.00
65
15.2
5.0
27.7
54.2
.085
1N6114A/US
20.9
50
16.7
5.0
30.5
49.2
.085
1N6115A/US
22.8
50
18.2
5.0
33.3
45.0
.09
1N6116A/US
25.7
50
20.6
5.0
37.4
40.1
.09
1N6117A/US
28.5
40
22.8
5.0
41.6
36.0
.09
1N6118A/US
31.4
40
25.1
5.0
45.7
32.8
.095
1N6119A/US
34.2
30
27.4
5.0
49.9
30.1
.095
1N6120A/US
37.1
30
29.7
5.0
53.6
28.0
.095
1N6121A/US
40.9
30
32.7
5.0
59.1
25.4
.095
1N6122A/US
44.7
25
35.8
5.0
64.6
23.2
.095
1N6123A/US
48.5
25
38.8
5.0
70.1
21.4
.095
1N6124A/US
53.2
20
42.6
5.0
77.0
19.5
.095
1N6125A/US
58.9
20
47.1
5.0
85.3
17.6
.100
1N6126A/US
64.6
20
51.7
5.0
97.1
15.4
.100
1N6127A/US
71.3
20
56.0
5.0
103.1
14.5
.100
1N6128A/US
77.9
15
62.2
5.0
112.8
13.3
.100
1N6129A/US
86.5
15
69.2
5.0
125.1
12.0
.100
1N6130A/US
95.0
12
76.0
5.0
137.6
10.9
.100
1N6131A/US
104.5
12
83.6
5.0
151.3
9.9
.100
1N6132A/US
114.0
10
91.2
5.0
165.1
9.1
.100
1N6133A/US
123.5
10
98.8
5.0
178.8
8.4
.105
1N6134A/US
142.5
8.0
114.0
5.0
206.3
7.3
.105
1N6135A/US
152
8.0
121.6
5.0
218.4
6.9
.105
1N6136A/US
171
5.0
136.8
5.0
245.7
6.1
.110
1N6137A/US
190
5.0
152.0
5.0
273.0
5.5
.110
1N6102A/US thru 1N6137A/US
相關(guān)PDF資料
PDF描述
1N6137AUS 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
1N5140 10 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N5142 15 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N5143A 18 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N5145 27 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N6131US 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 86.6V 500W 2PIN D-5B - Bulk
1N6132 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 91.2V 500W 2PIN E - Bulk
1N6132A 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 91.2V 500W 2PIN E-LINE - Bulk
1N6132AUS 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 91.2V 500W 2PIN MELF - Bulk
1N6132US 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 91.2V 500W 2PIN D-5B - Bulk
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