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參數(shù)資料
| 型號： | 1N6068 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | BIDIRECTIONAL TRANSIENT ABSORPTION ZENER |
| 中文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封裝： | HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 483K |
| 代理商： | 1N6068 |
1500 WATT BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2002
11-06-2003 REV A
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SCOTTSD A L E DIVISION
1N6036 and 1N6072A
1N
60
36
th
ru
1N
60
72
A
Rated
Standoff
Voltage
VWM
(NOTE 1)
Breakdown
Voltage
V(BR)
V(BR) min
V(BR) max @ I(BR)
Maximum
Clamping
Voltage
VC @ IPP
Maximum
Standby
Current
ID @ VWM
Maximum
Peak Pulse
Current
IPP
(See Fig. 2)
Maximum
Temperature
Coefficient of
V(BR)
JEDEC
Type
No.
Volts
mA
Volts
A
Amps
Volts
1N6062
*1N6062A
1N6063
*1N6063A
73.0
75.0
81.0
82.0
81.9
86.5
90.0
95.0
100.0
95.5
110.0
105.0
1
131.0
125.0
144.0
137.0
5
11.4
12.0
10.4
11.0
.106
1N6064
*1N6064A
1N6065
*1N6065A
90.0
94.0
95.0
100.0
99.0
105.0
108.0
114.0
121.0
116.0
132.0
126.0
1
158.0
152.0
176.0
168.0
5
9.5
9.9
8.5
8.9
.107
1N6066
*1N6066A
1N6067
*1N6067A
105.0
110.0
121.0
128.0
117.0
124.0
135.0
143.0
137.0
165.0
158.0
1
191.0
182.0
223.0
213.0
5
7.8
8.2
6.7
7.0
.107
.108
1N6068
*1N6068A
1N6069
*1N6069A
137.0
145.0
150.0
153.0
162.0
171.0
187.0
179.0
198.0
189.0
1
258.0
245.0
274.0
261.0
5
5.8
6.1
5.5
5.7
.108
1N6070
*1N6070A
1N6071
*1N6071A
155.0
160.0
165.0
170.0
171.0
181.0
180.0
190.0
210.0
200.0
220.0
210.0
1
292.0
278.0
308.0
294.0
5
5.1
5.4
4.9
5.1
.108
1N6072
*1N6072A
175.0
185.0
198.0
209.0
242.0
231.0
1
344.0
328.0
5
4.3
4.6
.108
* Also available in military qualified types by adding the prefix JAN, JANTX or JANTXV per MIL-PRF-19500/507.
NOTE 1: A TVS is normally selected according to the rated “Standoff Voltage” VWM that should be equal to or greater than the dc or continuous peak
operating voltage level.
SYMBOLS & DEFINITIONS
Symbol
Definition
VWM
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1 above)
V(BR)
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25
oC
VC
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the
peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise
due to both the series resistance and thermal rise and positive temperature coefficient (αV(BR))
IPP
Peak Pulse Current: The peak current during the impulse (See Figure 2)
PPP
Peak Pulse Power: The pulse power as determined by the product of VC and IPP
ID
Standby Current: The current at the standoff voltage (VWM)
I(BR)
Breakdown Current: The current used for measuring Breakdown Voltage (V(BR))
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6068A | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 145V 1.5KW 2-Pin DO-13 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 145V 1.5KW 2PIN DO-13 - Bulk |
| 1N6069 | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 145V 1.5KW 2PIN DO-13 - Bulk |
| 1N6069A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 150V 1.5KW 2PIN DO-13 - Bulk |
| 1N6069AJANTX | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 150V 1.5KW 2-Pin DO-13 |
| 1N607 | 制造商:General Electric Company 功能描述: |
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