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參數(shù)資料
| 型號(hào)： | 1N6055B |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 封裝： | HERMETIC SEALED, METAL, AXIAL PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 1N6055B |
All products are sold to the commercial specifications shown, for any additional reliability testing or extended parameters, please consult the factory.
contact semitron on: telephone: +44 (0)1793 724000 fax: +44 (0)1793 720401
39
IN60 SERIES (1500 WATT) METAL AXIAL TRANSIENT VOLTAGE
SUPPRESSORS (hermetically sealed package for harsh
industrial environments)
FEATURES
Stand-off voltage range 6.8 - 200 Volts
Glass Passivated Junction
Excellent clamping capability
Low zener impedance
100% Surge tested
-55°C to +150°C
Hermetically sealed
Bi-directional
MAXIMUM RATING
Peak Pulse Power (Ppk): 1500 Watts (10 X 1000s)
(see diagram on page 6 for wave form)
1 Watt Steady State
Response time: 1 X 10-12 seconds (theoretical)
Operating & storage temperature: -55°C to +150°C
MECHANICAL CHARACTERISTICS
CASE: Metal hermetically sealed DO-13 package
Terminals: Axial leads, solderable per MIL-STD-202 Method 208
Solderable leads = 230°C for 10 seconds (1.59mm from case)
Weight: 1.5 grammes (approx)
Voltage
5% Voltage Tolerance
Packaging Option
B = Bulk (500 pcs)
1N60
A
X
Reference
ORDERING INFORMATION
0
°C50°C100°C150°C
200
°C
0
50%
100%
Tamb
°C
Percentage peak pulse power plotted against ambient temperature
Permissible
area of
operation
0
°C50°C100°C150°C
200
°C
0
0.50
0.25
0.75
1.0
W
Tamb
°C
Continuous d.c. power dissipation plotted against junction temperature
Permissible
area of
operation
Figure 1 - Peak Power Derating Curve
Peak pulse power in percent of 25°c rating
Figure 2 - Continuous D.C. Power Derating Curve
Continuous d.c. power dissipation
31.8Min
5.33 Max
5.58
7.5
9.0
25.4 Min
0.6
0.8
All dimensions in mm
1N6036 - 1N6072A
1N6036 - 1N6072A series
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PDF描述 |
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| 1N6056AB | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6056B | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6058B | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6059AB | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6060AB | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6056 | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 41V 1.5KW 2PIN DO-13 - Bulk |
| 1N6056A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 43V 1.5KW 2PIN DO-13 - Bulk |
| 1N6057 | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 45V 1.5KW 2PIN DO-13 - Bulk |
| 1N6057A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 47V 1.5KW 2PIN DO-13 - Bulk |
| 1N6057AJ | 制造商:Vishay Semiconductors 功能描述: |
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