參數(shù)資料
型號: 1N5822RLG
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Axial Lead Rectifiers
中文描述: 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝: LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 103K
代理商: 1N5822RLG
1N5820, 1N5821, 1N5822
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
1N5820
1N5821
1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
V
NonRepetitive Peak Reverse Voltage
V
RSM
24
36
48
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
V
Average Rectified Forward Current (Note 1)
V
R(equiv)
0.2 V
R(dc)
, T
L
= 95
°
C
(R
JA
= 28
°
C/W, P.C. Board Mounting, see Note 5)
I
O
3.0
A
Ambient Temperature
Rated V
R(dc)
, P
F(AV)
= 0
R
JA
= 28
°
C/W
T
A
90
85
80
°
C
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
L
= 75
°
C)
I
FSM
80 (for one cycle)
A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
T
J
, T
stg
65 to +125
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*THERMAL CHARACTERISTICS
(Note 5)
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
28
°
C/W
*ELECTRICAL CHARACTERISTICS
(T
L
= 25
°
C unless otherwise noted) (Note 1)
Characteristic
Symbol
1N5820
1N5821
1N5822
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 Amp)
(i
F
= 3.0 Amp)
(i
F
= 9.4 Amp)
V
F
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
V
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
T
L
= 25
°
C
T
L
= 100
°
C
1. Lead Temperature reference is cathode lead 1/32
from case.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N582022.
i
R
2.0
20
2.0
20
2.0
20
mA
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