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參數(shù)資料
| 型號： | 1N5819RLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 1N5819RLG |
1N5817, 1N5818, 1N5819
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
1N5817
1N5818
1N5819
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
V
NonRepetitive Peak Reverse Voltage
V
RSM
24
36
48
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
V
Average Rectified Forward Current (Note 1), (V
R(equiv)
≤
0.2 V
R
(dc), T
L
= 90
°
C,
R
JA
= 80
°
C/W, P.C. Board Mounting, see Note 2, T
A
= 55
°
C)
I
O
1.0
A
Ambient Temperature (Rated V
R
(dc), P
F(AV)
= 0, R
JA
= 80
°
C/W)
T
A
85
80
75
°
C
NonRepetitive Peak Surge Current, (Surge applied at rated load conditions,
halfwave, single phase 60 Hz, T
L
= 70
°
C)
I
FSM
25 (for one cycle)
A
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
T
J
, T
stg
65 to +125
°
C
Peak Operating Junction Temperature (Forward Current applied)
T
J(pk)
150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
(Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
80
°
C/W
ELECTRICAL CHARACTERISTICS
(T
L
= 25
°
C unless otherwise noted) (Note 1)
Characteristic
Symbol
1N5817
1N5818
1N5819
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 0.1 A)
(i
F
= 1.0 A)
(i
F
= 3.0 A)
v
F
0.32
0.45
0.75
0.33
0.55
0.875
0.34
0.6
0.9
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(T
L
= 25
°
C)
(T
L
= 100
°
C)
I
R
1.0
10
1.0
10
1.0
10
mA
1. Lead Temperature reference is cathode lead 1/32 in from case.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N5817RLG | Axial Lead Rectifiers |
| 1N5818RLG | Axial Lead Rectifiers |
| 1N5820-B | 3.0A SCHOTTKY BARRIER RECTIFIERS |
| 1N5820-T | 3.0A SCHOTTKY BARRIER RECTIFIERS |
| 1N5821-B | 3.0A SCHOTTKY BARRIER RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5819RLG-CUT TAPE | 制造商:ON 功能描述:1N5819 Series 40 V 1 A Schottky Rectifier Diode - DO-201AD |
| 1N5819S | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
| 1N5819SF | 制造商:GXELECTRONICS 制造商全稱:Gaomi Xinghe Electronics Co., Ltd. 功能描述:SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere |
| 1N5819SX | 制造商:Microwave Semiconductor 功能描述: |
| 1N5819-T | 功能描述:肖特基二極管與整流器 Vr/40V Io/1A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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