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參數(shù)資料
| 型號： | 1N5819HW-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE |
| 封裝： | GREEN, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 1N5819HW-7-F |
DS30217 Rev. 12 - 2
2 of 3
1N5819HW
www.diodes.com
Diodes Incorporated
I
O
0
0.2
0.4
0.6
0.8
1.0
10
40
60
80
100
120
140
T , TERMINAL TEMPERATURE (oC)
Fig. 1 Forward Current Derating Curve
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
0.01
0.1
1
10
0.001
0.0001
0
1.0
0.6
0.8
0.4
0.2
I
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
T = 100oC
T = 75oC
T = 25oC
T = 0oC
T = 125oC
T = -65oC
Characteristic
Symbol
V
(BR)R
Min
40
Typ
10
1
15
1.5
50
Max
0.320
0.450
0.750
1.0
10
50
2
75
3
Unit
V
Test Condition
I
R
= 1.0mA
I
F
= 0.1A
I
F
= 1.0A
I
F
= 3.0A
V
R
= 40V, T
A
= 25
°
C
V
R
= 40V, T
A
= 100
°
C
V
R
= 4V, T
A
= 25°C
V
R
= 4V, T
A
= 100°C
V
R
= 6V, T
A
= 25
°
C
V
R
= 6V, T
A
= 100°C
V
R
= 4V, f = 1.0MHz
Reverse Breakdown Voltage (Note 3)
Forward Voltage
V
F
V
Reverse Leakage Current (Note 3)
I
R
mA
mA
μ
A
mA
μ
A
mA
pF
Total Capacitance
C
T
Notes: 3. Short duration pulse test used to minimize self-heating effect.
C
T
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
1000
10
100
0
10
20
30
40
f = 1MHz
0
5
10
15
20
25
1
10
100
I
,
F
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
8.3ms Single Half Sine-Wave
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
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