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參數(shù)資料
| 型號： | 1N5811US |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS, E, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 188K |
| 代理商： | 1N5811US |
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5807US thru 1N5811US
1N5807US–1N5811US
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
GRAPHS
FIGURE 1
FIGURE 2
TYPICAL FORWARD CURRENT
TYPICAL REVERSE CURRENT vs. VOLTAGE
vs. FORWARD VOLTAGE
FIGURE 3
FORWARD PULSE CURRENT vs. DURATION
Microsemi
Scottsdale Division
Page 2
Copyright
2008
1-23-2008 REV E
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料 |
PDF描述 |
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| 1N5813 | 20 A, SILICON, RECTIFIER DIODE |
| 1N5817TR | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5817 | 1 A, 20 V, SILICON, SIGNAL DIODE |
| 1N5817 | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5818 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5811US/TR | 功能描述:UFR,FRR 制造商:microsemi corporation 系列:- 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:150V 電流 - 平均整流（Io）:3A 不同 If 時的電壓 - 正向（Vf:875mV @ 4A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間（trr）:30ns 不同?Vr 時的電流 - 反向漏電流:5μA @ 150V 不同?Vr，F(xiàn) 時的電容:60pF @ 10V，1MHz 安裝類型:表面貼裝 封裝/外殼:SQ-MELF，B 供應(yīng)商器件封裝:B，SQ-MELF 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準(zhǔn)包裝:100 |
| 1N5811USC3 | 制造商:Microsemi Corporation 功能描述:LAWRENCE CAT 3 BOND - Bulk |
| 1N5811USE3 | 制造商:Microsemi Corporation 功能描述:1N5811USE3 - Bulk |
| 1N5811USJANS | 制造商:Microsemi Corporation 功能描述: 制造商:Sensitron Semiconductors 功能描述: |
| 1N5811USJANTX | 制造商:SEM 功能描述: |
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