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參數(shù)資料
| 型號： | 1N5706B |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | 47 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 33K |
| 代理商： | 1N5706B |
P.O. BOX 609
ROCKPORT, MAINE 04856 207-236-6076 FAX 207-236-9558
GENERAL PURPOSE ABRUPT VARACTOR DIODES
1N5681 TO 1N5709
PART
CAPACITANCE
MIN QUALITY FACTOR
CAPACITANCE RATIO
MAX WORKING
MIN REVERSE
NUMBER
@ 4Vdc
2V / 40V
4V / 60V
VOLTAGE
BREAKDOWN VOLTAGE
1 MHz (pF)
F = 50 MHz
MIN TYP
MIN
TYP
(Vdc)
Ir = 10A (Vdc)
1N5681
6.8
600
3.1
3.3
40
45
1N5682
8.2
600
3.1
3.3
40
45
1N5683
10.0
550
3.2
3.4
40
45
1N5684
12.0
550
3.2
3.4
40
45
1N5685
15.0
550
3.2
3.4
40
45
1N5686
18.0
500
3.2
3.4
40
45
1N5687
22.0
500
3.3
3.5
40
45
1N5688
27.0
500
3.3
3.5
40
45
1N5689
33.0
500
3.3
3.5
40
45
1N5690
39.0
450
3.3
3.5
40
45
1N5691
47.0
400
3.3
3.5
40
45
1N5692
56.0
300
3.3
3.5
40
45
1N5693
68.0
250
3.3
3.5
40
45
1N5694
82.0
225
3.3
3.5
40
45
1N5695
100.0
200
3.3
3.5
40
45
1N5696
6.8
450
2.7
2.9
60
65
1N5697
8.2
450
2.7
2.9
60
65
1N5698
10.0
400
2.8
3.0
60
65
1N5699
12.0
400
2.8
3.0
60
65
1N5700
15.0
400
2.8
3.0
60
65
1N5701
18.0
375
2.8
3.0
60
65
1N5702
22.0
375
3.2
3.4
60
65
1N5703
27.0
350
3.2
3.4
60
65
1N5704
33.0
350
3.2
3.4
60
65
1N5705
39.0
325
3.2
3.4
60
65
1N5706
47.0
300
3.2
3.4
60
65
1N5707
56.0
225
3.2
3.4
60
65
1N5708
68.0
175
3.2
3.4
60
65
1N5709
82.0
150
3.2
3.4
60
65
Package Style
DO-7
DC Power Dissipation
400 mW
Max Reverse Current (IR)
@ Ta = 25°C
20 nA @ MWV
Max Reverse Current (IR2)
@ Ta = 150°C
20 A @ MWV
Operating Temperature (Topr)
-65 to + 175°C
Storage Temperature (Tstg)
-65 to + 200°C
Capacitance Tolerance:
Standard Device
±20%
Suffix A
±±10%
Suffix B
±±5%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N5708A | 68 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 1N5683B | VHF-UHF BAND, 10 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 1N5692B | VHF-UHF BAND, 56 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14 |
| 1N5699B | VHF-UHF BAND, 12 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 1N5701B | VHF-UHF BAND, 18 pF, 65 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5707 | 制造商:KNOX 制造商全稱:KNOX 功能描述:GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 1N5708 | 制造商:KNOX 制造商全稱:KNOX 功能描述:GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 1N5709 | 制造商:KNOX 制造商全稱:KNOX 功能描述:GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 1N5709B | 制造商:ASI 制造商全稱:ASI 功能描述:ABRUPT VARACTOR DIODE |
| 1N571 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GOLD BONDED DIODES(Low forward voltage, low power consumption) |
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