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參數(shù)資料
| 型號： | 1N5619US |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast Rectifier (100-500ns) |
| 中文描述： | 1 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, D-5A, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 148K |
| 代理商： | 1N5619US |
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5615US thru 1N5623US
1N5615US
–
1N5623US
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range
IO
Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave
input and a 180 degree conduction angle
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1
FIGURE 2
TYPICAL REVERSE CURRENT vs VR
TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT
Microsemi
Scottsdale Division
Page 2
Copyright
2009
10-06-2009 REV E; SD47A.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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