型號(hào): | 1N5539B-1 |
英文描述: | LOW REVERSE LEAKAGE CHARACTERISTICS |
中文描述: | 低的反向漏電特性 |
文件頁數(shù): | 2/2頁 |
文件大?。?/td> | 99K |
代理商: | 1N5539B-1 |
相關(guān)PDF資料 |
PDF描述 |
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1N5539B | LOW REVERSE LEAKAGE CHARACTERISTICS |
1N5540B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
1N5541B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
1N5543B-1 | OSC 5V OTHER |
1N5543B | LOW REVERSE LEAKAGE CHARACTERISTICS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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1N5539BTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
1N5539BUR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
1N5539BUR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ZENER DIODE, 500mW |
1N5539BURTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
1N5539C | 制造商:JGD 制造商全稱:Jinan Gude Electronic Device 功能描述:0.4W LOW VOLTAGE AVALANCHE DIODES |